Characteristcs of Ga-Doped ZnO Films Prepared by RF Magnetron Sputtering in Ar+H<SUB>2</SUB> Ambience

Koichi MUTO; Satoru ODASHIMA; Norimitsu NASU; Osamu MICHIKAMI

doi:10.1093/ietele/e91-c.10.1649

Characteristcs of Ga-Doped ZnO Films Prepared by RF Magnetron Sputtering in Ar+H₂ Ambience

Koichi MUTO, Satoru ODASHIMA, Norimitsu NASU, Osamu MICHIKAMI

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Ga-doped ZnO thin films were prepared by RF magnetron sputtering. The effects of adding H₂ to pure Ar sputtering gas were investigated. In the case of pure Ar at 2 Pa, the resistivity is 7.4510^-3 Ωcm, whereas for Ar+1%H₂ at 0.3 Pa, it markedly decreases to 2.5210^-4 Ωcm. In this case, the carrier density and Hall mobility are 1.1210²¹ cm^-3 and 23.4 cm^2/Vs, respectively. This conductive film also exhibits a transmittance of 90% within the visible-wavelength range. The addition of H₂ and the decrease in the pressure results in the fabrication of a significantly more transparent and conductive film.

Publication: IEICE TRANSACTIONS on Electronics Vol.E91-C No.10 pp.1649-1652

Publication Date: 2008/10/01

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Online ISSN: 1745-1353

DOI: 10.1093/ietele/e91-c.10.1649

Type of Manuscript: Special Section PAPER (Special Section on Functional Thin Films for Optical Applications)

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Koichi MUTO, Satoru ODASHIMA, Norimitsu NASU, Osamu MICHIKAMI, "Characteristcs of Ga-Doped ZnO Films Prepared by RF Magnetron Sputtering in Ar+H2 Ambience" in IEICE TRANSACTIONS on Electronics, vol. E91-C, no. 10, pp. 1649-1652, October 2008, doi: 10.1093/ietele/e91-c.10.1649.
Abstract: Ga-doped ZnO thin films were prepared by RF magnetron sputtering. The effects of adding H₂ to pure Ar sputtering gas were investigated. In the case of pure Ar at 2 Pa, the resistivity is 7.4510^-3 Ωcm, whereas for Ar+1%H₂ at 0.3 Pa, it markedly decreases to 2.5210^-4 Ωcm. In this case, the carrier density and Hall mobility are 1.1210²¹ cm^-3 and 23.4 cm^2/Vs, respectively. This conductive film also exhibits a transmittance of 90% within the visible-wavelength range. The addition of H₂ and the decrease in the pressure results in the fabrication of a significantly more transparent and conductive film.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.10.1649/_p

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@ARTICLE{e91-c_10_1649,
author={Koichi MUTO, Satoru ODASHIMA, Norimitsu NASU, Osamu MICHIKAMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characteristcs of Ga-Doped ZnO Films Prepared by RF Magnetron Sputtering in Ar+H2 Ambience},
year={2008},
volume={E91-C},
number={10},
pages={1649-1652},
abstract={Ga-doped ZnO thin films were prepared by RF magnetron sputtering. The effects of adding H₂ to pure Ar sputtering gas were investigated. In the case of pure Ar at 2 Pa, the resistivity is 7.4510^-3 Ωcm, whereas for Ar+1%H₂ at 0.3 Pa, it markedly decreases to 2.5210^-4 Ωcm. In this case, the carrier density and Hall mobility are 1.1210²¹ cm^-3 and 23.4 cm^2/Vs, respectively. This conductive film also exhibits a transmittance of 90% within the visible-wavelength range. The addition of H₂ and the decrease in the pressure results in the fabrication of a significantly more transparent and conductive film.},
keywords={},
doi={10.1093/ietele/e91-c.10.1649},
ISSN={1745-1353},
month={October},}

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TY - JOUR
TI - Characteristcs of Ga-Doped ZnO Films Prepared by RF Magnetron Sputtering in Ar+H2 Ambience
T2 - IEICE TRANSACTIONS on Electronics
SP - 1649
EP - 1652
AU - Koichi MUTO
AU - Satoru ODASHIMA
AU - Norimitsu NASU
AU - Osamu MICHIKAMI
PY - 2008
DO - 10.1093/ietele/e91-c.10.1649
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2008
AB - Ga-doped ZnO thin films were prepared by RF magnetron sputtering. The effects of adding H₂ to pure Ar sputtering gas were investigated. In the case of pure Ar at 2 Pa, the resistivity is 7.4510^-3 Ωcm, whereas for Ar+1%H₂ at 0.3 Pa, it markedly decreases to 2.5210^-4 Ωcm. In this case, the carrier density and Hall mobility are 1.1210²¹ cm^-3 and 23.4 cm^2/Vs, respectively. This conductive film also exhibits a transmittance of 90% within the visible-wavelength range. The addition of H₂ and the decrease in the pressure results in the fabrication of a significantly more transparent and conductive film.
ER -