A new high ruggedness Power MOSFET structure with a planar oxide self align p+ implant structure is proposed and discussed. We compare the proposed self-align process with the conventional p+ MASK process and contact p+ implant process. It is shown that the self align implant structure with a wide p+ area can reduce the parasitic BJT effect and, therefore, improve the device's avalanche energy capability, which is required for inductive load circuits. Based on the unclamped inductive load switching measurement results, the proposed device avalanche energy with self align p+ implant process is improved about 355% as compared to the traditional one.