A 1.3-µm InGaAlAs-MQW RWG DFB laser with low-resistance notch-free grating during operations of up to 12.5 Gb/s at 115 was fully investigated. This performance was achieved by combining the high differential gain of the InGaAlAs MQW active layer, high characteristic temperature of RWG structures, and low-resistance notch-free grating. In addition, transmission over 30-km was achieved with the laser running at up to 115. These results confirm the suitability of this type of laser for use as a cost-effective light source in 10-Gb/s datacom applications.

Our recent progress in improving the performance of the GaInNAs laser is fully reviewed here. We improved the crystal quality of GaInNAs by optimizing the conditions for its grown by gas-source molecular beam epitaxy (MBE) using N radicals as a N source. We found that the temperature window for obtaining GaInNAs with high crystal quality, good surface morphology, and good photoluminescence (PL) characteristics is smaller than that for obtaining this kind of GaInAs. Like dopant atoms such as Si or Be in GaAs, the N radicals produced by an RF discharge have a high sticking coefficient. Their use is therefore effective when we want to increase and control the N content of GaInNAs. We found that the AsH3-flow-rate mainly affected crystal quality of GaInNAs rather than incorporation of nitrogen atoms. We also investigated the effects of thermal annealing on the optical properties of as-grown GaInNAs layers and found that it greatly increased the PL intensity and produced the large shift in the PL wavelength. The absorption spectra of the GaInNAs bulk layer revealed that the large shift in the PL wavelength is probably caused by a bandgap shift in the GaInNAs well layer, and cathodeluminescence measurements revealed that the increased PL intensity is due to the improved emission being more uniform spatially: uniformity from the entire region; in comparison, nonuniform dot-like regions exist in an as-grown GaInNAs layer. Optimizing the growth conditions and using thermal annealing effect, we made a 1.3-µm GaInNAs/GaAs single-quantum-well laser that has a high characteristic temperature (215 K) under pulsed operation. To our knowledge, this is the highest characteristic temperature reported for a 1.3-µm band-edge emitter suitable for used in optical-fiber communication systems. The use of GaInNAs as an active layer is, therefore, very promising for the fabrication of long-wavelength laser diodes with excellent high-temperature performance.

A high-speed physical-layer architecture for Ethernet is described that supports 100-Gb/s throughput and 40-km transmission, making it well suited for next-generation metro-area and intrabuilding networks. Its links comprise 1210-Gb/s synchronized parallel optical lanes. Ethernet data frames are transmitted by coarse wavelength division multiplexing link and bundled optical fibers. Ten of the lanes convey 640-bit data synchronously (64 bits10 lanes). One conveys forward error correction code ((132 b, 140 b) Hamming code), providing highly reliable (BER < 10-12) data transmission, and the other conveys parity data, enabling fault-lane recovery. A newly developed 64B/66B code-sequence-based deskewing mechanism is used that provides low-latency compensation for the lane-to-lane skew, which is less than 88 ns. Testing of this physical-layer architecture in a field programmable gate array circuit demonstrated that it can provide 100-Gb/s data communication with a 590 k gate circuit, which is small enough for implementation in a single LSI circuit.