HfOxNy thin films formed by the electron cyclotron resonance (ECR) Ar/N2 plasma nitridation of HfO2 films were investigated for high-k gate insulator applications. HfOxNy thin films formed by the ECR Ar/N2 plasma nitridation (60 s) of 1.5-nm-thick HfO2 films, which were deposited on chemically oxidized Si(100) substrates, were found to be effective for suppressing interfacial layer growth or crystallization during postdeposition annealing (PDA) in N2 ambient. After 900 PDA of for 5 min in N2 ambient, it was found that HfSiON film with a relatively high dielectric constant was formed on the HfOxNy/Si interface by Si diffusion. An equivalent oxide thickness (EOT) of 2.0 nm and a leakage current density of 1.010-3 A/cm2 (at VFB-1 V) were obtained. The effective mobility of the fabricated p-channel metal-insulator-semiconductor field-effect transistor (MISFET) with the HfOxNy gate insulator was 50 cm2/Vs, and the gate leakage current of the MISFET with the HfOxNy gate insulator was found to be well suppressed compared with the MISFET with the HfO2 gate insulator after 900 PDA because of the nitridation of HfO2.

We investigate the origin of non-ideal transfer characteristics in graphene-based three-branch nano-junction (TBJ) devices. Fabricated graphene TBJs often show asymmetric nonlinear voltage transfer characteristic, although symmetric one should appear ideally. A simple model considering the contact resistances in two input electrodes is deduced and it suggests that the non-ideal characteristic arises from inequality of the metal-graphene contact resistances in the inputs. We fabricate a graphene TBJ device with electrically equal contacts by optimizing the contact formation process and almost ideal nonlinear characteristic was successfully demonstrated.

A linkage is a collection of line segments, called bars, possibly joined at their ends, called joints. A planar reconfiguration of a linkage is a continuous motion of their bars, preserving the length of each bar and disallowing bars to cross. In this paper, we introduce a class of linkages, called "monotone trees," and give a method for reconfiguring a monotone tree to a straight line. If the tree has n joints, then the method takes at most n-1 moves, each of which uses two joints. We also obtain an algorithm to find such a method in time O(n log n), using space O(n). These time and space complexities are optimal.

An efficient algorithm is proposed for finding all dc solutions of piecewise-linear (PWL) circuits. This algorithm is based on a powerful test (termed the LP test) for nonexistence of a solution to a system of PWL equations in a given region using the dual simplex method. The proposed algorithm also uses a special technique that decreases the number of regions on which the LP test is performed. By numerical examples, it is shown that the proposed algorithm could find all solutions of large scale problems, including those where the number of variables is 500 and the number of linear regions is 10500, in practical computation time.