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Jun GOTO Kazuteru KOMINE Masaru MIYAZAKI Yeun-Bae KIM Noriyoshi URATANI
The development of multi-channel digital broadcasting has generated a demand not only for new services but also for smart and highly functional capabilities in all broadcast-related devices. This is especially true of TV receivers on the viewer's side. With the aim of achieving a friendly interface that anybody can use with ease, we built a prototype spoken dialogue interface for TV operation based on data collected by using Wizard of Oz method. At the current stage of our research, we are using this system to investigate the usefulness and problem areas of an interactive voice interface for TV operation.
Hidetoshi MATSUMOTO Yasunari UMEMOTO Yoshihisa OHISHI Mitsuharu TAKAHAMA Kenji HIRUMA Hiroto ODA Masaru MIYAZAKI Yoshinori IMAMURA
We have developed a new HIGFET structure achieving an extremely high K-value of 13.3 S/Vcm with a gate length of 0.15 µm. Self-aligned ion implantation is excluded to suppress a short-channel effect. An i-GaAs cap layer and an n+-GaAs contact layer are employed to reduce source resistance. The threshold voltage shift is as small as 50 mV when the gate length is reduced from 1.5 µm to 0.15 µm. Source resistance is estimated to be 53 mΩcm. We have also developed a new fabrication process that can achieve a shorter gate length than the minimum size of lithography. This process utilizes an SiO2 sidewall formed on the n+-GaAs contact layer to reduce the gate length. A gate length of 0.15 µm can be achieved using 0.35 µm lithography.