We have developed a new HIGFET structure achieving an extremely high K-value of 13.3 S/Vcm with a gate length of 0.15 µm. Self-aligned ion implantation is excluded to suppress a short-channel effect. An i-GaAs cap layer and an n+-GaAs contact layer are employed to reduce source resistance. The threshold voltage shift is as small as 50 mV when the gate length is reduced from 1.5 µm to 0.15 µm. Source resistance is estimated to be 53 mΩcm. We have also developed a new fabrication process that can achieve a shorter gate length than the minimum size of lithography. This process utilizes an SiO2 sidewall formed on the n+-GaAs contact layer to reduce the gate length. A gate length of 0.15 µm can be achieved using 0.35 µm lithography.