An automatic optimization system for semiconductor devices has been built-up by fully interfacing an optimizer and a device-analysis code supplemented with sensitivity analysis. The device-analysis code is thought of as a part of a pipeline of simulators. The latters are regarded as subprocesses by the optimizer, which controls their I/O stream. The action of the pipeline is iterated until the optimum set of design parameters is determined. An important feature of the system is that all the derivatives required in the sensitivity analysis are calculated analytically, this providing a substantial improvement in both the numerical accuracy and computational efficiency, and making the scheme attractive from the application standpoint. A few examples of optimization of MOS devices are shown and the performance is reported, indicating that a system of this kind can usefully be exploited in a design environment.

A two-qubit system made of electrons running along coupled pairs of quantum wires is described and numerically analyzed. A brief review of the basic gates is given first, based on preliminary investigations, followed by the description of the electron dynamics. A detailed analysis of a conditional phase shifter is carried out by means of a time-dependent Schrodinger solver applied to a two-particle system. A quantum network suitable for creating entanglement is simulated, and results are shown. The physical structure of the proposed network is within the reach of a solid-state implementation. The physical parameters used in the computations have been chosen with reference to silicon quantum wires embedded in silicon dioxide.

A first-order investigation of the transport and energy-loss processes in silicon dioxide is worked out in the frame of the Spherical-Harmonics solution of the Boltzmann Transport Equation. The SiO2 conduction band is treated as a single-valley spherical and parabolic band. The relevant scattering mechanisms are modeled consistently: both the polar and nonpolar electron-phonon scattering mechanisms are considered. The scattering rates for each contribution are analyzed in comparison with Monte Carlo data. A number of macroscopic transport properties of electrons in SiO2 are worked out in the steady-state regime for a homogeneous bulk structure. The investigation shows a good agreement in comparison with experiments in the low-field regime and for different temperatures.