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[Author] Michiharu NAKAMURA(2hit)

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  • Determining Memory Polynomial Model Parameters from Those of Complex p-th Order Inverse for Designing Predistorter

    Michiharu NAKAMURA  Eisuke FUKUDA  Yoshimasa DAIDO  Keiichi MIZUTANI  Takeshi MATSUMURA  Hiroshi HARADA  

     
    PAPER-Wireless Communication Technologies

      Pubricized:
    2021/06/01
      Vol:
    E104-B No:11
      Page(s):
    1429-1440

    Non-linear behavioral models play a key role in designing digital pre-distorters (DPDs) for non-linear power amplifiers (NLPAs). In general, more complex behavioral models have better capability, but they should be converted into simpler versions to assist implementation. In this paper, a conversion from a complex fifth order inverse of a parallel Wiener (PRW) model to a simpler memory polynomial (MP) model is developed by using frequency domain expressions. In the developed conversion, parameters of the converted MP model are calculated from those of original fifth order inverse and frequency domain statistics of the transmit signal. Since the frequency domain statistics of the transmit signal can be precalculated, the developed conversion is deterministic, unlike the conventional conversion that identifies a converted model from lengthy input and output data. Computer simulations are conducted to confirm that conversion error is sufficiently small and the converted MP model offers equivalent pre-distortion to the original fifth order inverse.

  • Efficient Method to Measure IMD of Power Amplifier with Simplified Phase Determination Procedure to Clarify Memory Effect Origins

    Takeshi TAKANO  Yasuyuki OHISHI  Shigekazu KIMURA  Michiharu NAKAMURA  Kazuo NAGATANI  Eisuke FUKUDA  Yoshimasa DAIDO  Kiyomichi ARAKI  

     
    PAPER

      Vol:
    E93-C No:7
      Page(s):
    991-999

    This paper describes a time-domain expression based on the physical model of power amplifiers where electric memory effect is considered to be caused by even-order nonlinearity and bias impedance. It is demonstrated that the time-domain expression is consistent with the general memory polynomial reported by D.R. Morgan et al. To confirm validity of the physical model, a simple method is proposed to measure amplitude and phase of IMD by two tone test: the phase is extracted from measured small signal S-parameters of the amplifier under test. The method is applied to a GaN FET amplifier under condition that memory effect is enhanced by applying inductive cable for DC supply. Frequency dependent IMD is fitted by a parallel connection of L, C, and R: it has been confirmed that the frequency dependence of IMD is given by the bias impedance at even order harmonics of envelope frequency. The frequency dependence assures the validity of the physical model as well as the time-domain expression.