Ultrahigh speed and low crosstalk four-channel receiver optoelectronic integrated circuit (OEIC) arrays comprising GaInAs pin PDs and A1InAs/GaInAs HEMTs have been successfully fabricated on an InP substrate. These arrays were designed to have good crosstalk characteristics which are the most critical issue in array devices. The resistive-load OEIC arrays exhibited high speed operation up to 5 Gb/s and low crosstalk of less than -38 dB between whole adjacent channels over entire frequency range below 4.0 GHz. The average sensitivity of resistive-load OEIC arrays was -18.5 dBm at 3 Gb/s for a bit-error-rate of 10-9 over four channels. Good uniformity of device characteristics was obtained over 2-inch InP wafer. These results suggest that receiver OEIC arrays are quite promising for the application to high-speed multi-channel optical interconnections.