1-2hit |
Jean GODIN Agnieszka KONCZYKOWSKA Muriel RIET Jacques MOULU Philippe BERDAGUER Filipe JORGE
Various mixed-signal very-high-speed integrated circuits have been developed using InP DHBTs. These circuits have been designed for fiber-optic 43 Gbit/s transmissions applications. They include: on the transmitting side, a clocked driver and an EAM driver, as well as a PSBT/DQPSK precoder; on the receiving side, a sensitive decision circuit, a limiting amplifier and an eye monitor. System experiments made possible by these circuits include a 6 Tbit/s transmission on >6000 km distance.
Muriel MULLER Suwimol WITHITSOONTHORN Muriel RIET Jean-Louis BENCHIMOL Carmen GONZALEZ
In this paper, we describe the design, optimization and fabrication of high-speed InP/InGaAs heterojunction bipolar phototransistors (photo-HBTs) with both optical cut-off frequency (Fc) and optical gain (Gopt) higher than 100 GHz and 30 dB, respectively. Small- and large-signal models of the photo-HBT have been developed in order to design optoelectronic monolithically integrated circuits (OEIC) using this device. Integrated circuits such as optoelectronic narrow-band amplifiers at 28 GHz with a transimpedance gain of 50 dBΩ and optoelectronic upconverting mixers at 28 and 42 GHz with a mixer conversion gain of 17.8 dB and 9.2 dB respectively, were fabricated. The performances of the mixer circuits were superior to those of individual photo-HBT mixer. These optoelectronic integrated circuits based on InP photo-HBTs are attractive building blocks for realizing compact and cost-effective photoreceivers for millimeter-wave radio-over-fiber links.