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Shigeki NAKAGAWA Nobuhiko FUNABASHI Jie FENG Masahiko NAOE
Magnetoplumbite type Ba ferrite (BaM) disks were prepared on Pt and Pt-Ta underlayers using facing targets sputtering apparatus. Pt underlayers are more effective than ZnO underlayers to promote c-axis orientation of BaM layers, especially for extremely thin BaM films. Pt-Ta underlayer was used to decrease the grain size of BaM layers. BaM/Pt-Ta disks revealed larger S/N ratio than BaM/Pt disks because of their larger signal output and lower media noise level. BaM disks with 50 nm thick BaM layers revealed lower noise level and larger S/N ratio than that with 100 nm thick BaM layers due to smaller grain size.
Jie FENG Nobuhiko FUNABASHI Nobuhiro MATSUSHITA Shigeki NAKAGAWA Masahiko NAOE
SiO2-added Ba ferrite (BaM:SiO2) films were prepared using BaFe12Si0.18Ox targets. BaM:SiO2 films exhibited perpendicular coercivity Hc⊥ of over 4.2 kOe and squareness ratio of 0.83, although saturation magnetization Ms decreased by about 15%. The angular dependence of coercivity Hc and remanent coercivity Hr were investigated to explain the magnetization reversal mechanism. Intergranular interactions in the films were also evaluated. The magnetization reversal mode of Ba ferrite films with and without SiO2 additives is not coherent rotation but appears to be the curling mode. The origin of the high coercivity of BaM:SiO2 films is different from that of Al-substituted Ba ferrite films. It seemed that SiO2 additives and the defects caused by them decreased Ms and prevented the expansion of reversed domains in the magnetization reversal process, similarly to some pinning effects, and caused high Hc⊥ of 4.2-5.1 kOe in BaM:SiO2 films.