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Naoki NISHIMOTO Nobuhiro KOBAYASHI Naoyuki KAWASAKI Yasuaki HIGUCHI Yasutomo KAJIKAWA
A TlGaAs/GaAs multiple quantum-well (MQW) structure having four identical well layers was grown on a GaAs (001) substrate by low-temperature molecular-beam epitaxy (MBE) at 190. The (004) X-ray diffraction (XRD) curve of this sample showed satellite peaks up to the 3rd order at least. The measured XRD curve agreed well with the theoretically simulated one with a Tl content of x=7% and a width of 57 for the TlxGa1-xAs well layers. This result indicates that the grown MQW structure has good single-crystalline quality as well as flat and sharp interfaces.