Low-Temperature MBE Growth of a TlGaAs/GaAs Multiple Quantum-Well Structure

Naoki NISHIMOTO; Nobuhiro KOBAYASHI; Naoyuki KAWASAKI; Yasuaki HIGUCHI; Yasutomo KAJIKAWA

Low-Temperature MBE Growth of a TlGaAs/GaAs Multiple Quantum-Well Structure

Naoki NISHIMOTO, Nobuhiro KOBAYASHI, Naoyuki KAWASAKI, Yasuaki HIGUCHI, Yasutomo KAJIKAWA

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A TlGaAs/GaAs multiple quantum-well (MQW) structure having four identical well layers was grown on a GaAs (001) substrate by low-temperature molecular-beam epitaxy (MBE) at 190. The (004) X-ray diffraction (XRD) curve of this sample showed satellite peaks up to the 3rd order at least. The measured XRD curve agreed well with the theoretically simulated one with a Tl content of x=7% and a width of 57 for the Tl_xGa_1-xAs well layers. This result indicates that the grown MQW structure has good single-crystalline quality as well as flat and sharp interfaces.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.2082-2084

Publication Date: 2003/10/01

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Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)

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Naoki NISHIMOTO, Nobuhiro KOBAYASHI, Naoyuki KAWASAKI, Yasuaki HIGUCHI, Yasutomo KAJIKAWA, "Low-Temperature MBE Growth of a TlGaAs/GaAs Multiple Quantum-Well Structure" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 10, pp. 2082-2084, October 2003, doi: .
Abstract: A TlGaAs/GaAs multiple quantum-well (MQW) structure having four identical well layers was grown on a GaAs (001) substrate by low-temperature molecular-beam epitaxy (MBE) at 190. The (004) X-ray diffraction (XRD) curve of this sample showed satellite peaks up to the 3rd order at least. The measured XRD curve agreed well with the theoretically simulated one with a Tl content of x=7% and a width of 57 for the Tl_xGa_1-xAs well layers. This result indicates that the grown MQW structure has good single-crystalline quality as well as flat and sharp interfaces.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_10_2082/_p

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@ARTICLE{e86-c_10_2082,
author={Naoki NISHIMOTO, Nobuhiro KOBAYASHI, Naoyuki KAWASAKI, Yasuaki HIGUCHI, Yasutomo KAJIKAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low-Temperature MBE Growth of a TlGaAs/GaAs Multiple Quantum-Well Structure},
year={2003},
volume={E86-C},
number={10},
pages={2082-2084},
abstract={A TlGaAs/GaAs multiple quantum-well (MQW) structure having four identical well layers was grown on a GaAs (001) substrate by low-temperature molecular-beam epitaxy (MBE) at 190. The (004) X-ray diffraction (XRD) curve of this sample showed satellite peaks up to the 3rd order at least. The measured XRD curve agreed well with the theoretically simulated one with a Tl content of x=7% and a width of 57 for the Tl_xGa_1-xAs well layers. This result indicates that the grown MQW structure has good single-crystalline quality as well as flat and sharp interfaces.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - Low-Temperature MBE Growth of a TlGaAs/GaAs Multiple Quantum-Well Structure
T2 - IEICE TRANSACTIONS on Electronics
SP - 2082
EP - 2084
AU - Naoki NISHIMOTO
AU - Nobuhiro KOBAYASHI
AU - Naoyuki KAWASAKI
AU - Yasuaki HIGUCHI
AU - Yasutomo KAJIKAWA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - A TlGaAs/GaAs multiple quantum-well (MQW) structure having four identical well layers was grown on a GaAs (001) substrate by low-temperature molecular-beam epitaxy (MBE) at 190. The (004) X-ray diffraction (XRD) curve of this sample showed satellite peaks up to the 3rd order at least. The measured XRD curve agreed well with the theoretically simulated one with a Tl content of x=7% and a width of 57 for the Tl_xGa_1-xAs well layers. This result indicates that the grown MQW structure has good single-crystalline quality as well as flat and sharp interfaces.
ER -