1-1hit |
Nb3 (Ge, Si)/a-Si oxide/Pb junctions have been fabricated and their I-V characteristics have been investigated. Δsum gap, Rsub gap/RNN and IcRNN take excellent values of 4.7 mV, 18 and 4 mV, respectively, by oxidizing surface layer of a-Si before exposure to air until barrier thickness becomes 2025 .