Josephson Tunneling Junctions with High Tc Nb3 (Ge, Si) Lower Electrode
Summary :
Nb3 (Ge, Si)/a-Si oxide/Pb junctions have been fabricated and their I-V characteristics have been investigated. Δsum gap, Rsub gap/RNN and Ic
- Publication
- IEICE TRANSACTIONS on transactions Vol.E68-E No.5 pp.343-344
- Publication Date
- 1985/05/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- LETTER
- Category
- Electron Devices
Authors
Keyword
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Norio TERADA, Masahiko NAOE, "Josephson Tunneling Junctions with High Tc Nb3 (Ge, Si) Lower Electrode" in IEICE TRANSACTIONS on transactions,
vol. E68-E, no. 5, pp. 343-344, May 1985, doi: .
Abstract: Nb3 (Ge, Si)/a-Si oxide/Pb junctions have been fabricated and their I-V characteristics have been investigated. Δsum gap, Rsub gap/RNN and Ic
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e68-e_5_343/_p
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@ARTICLE{e68-e_5_343,
author={Norio TERADA, Masahiko NAOE, },
journal={IEICE TRANSACTIONS on transactions},
title={Josephson Tunneling Junctions with High Tc Nb3 (Ge, Si) Lower Electrode},
year={1985},
volume={E68-E},
number={5},
pages={343-344},
abstract={Nb3 (Ge, Si)/a-Si oxide/Pb junctions have been fabricated and their I-V characteristics have been investigated. Δsum gap, Rsub gap/RNN and Ic
keywords={},
doi={},
ISSN={},
month={May},}
Copy
TY - JOUR
TI - Josephson Tunneling Junctions with High Tc Nb3 (Ge, Si) Lower Electrode
T2 - IEICE TRANSACTIONS on transactions
SP - 343
EP - 344
AU - Norio TERADA
AU - Masahiko NAOE
PY - 1985
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E68-E
IS - 5
JA - IEICE TRANSACTIONS on transactions
Y1 - May 1985
AB - Nb3 (Ge, Si)/a-Si oxide/Pb junctions have been fabricated and their I-V characteristics have been investigated. Δsum gap, Rsub gap/RNN and Ic
ER -
English
