Gallium oxide is expected as a channel material for thin film transistors. In the conventional technologies, gallium oxide has been tried to be fabricated by atomic layer deposition (ALD) at high temperatures from 100--450$^{circ}$C, although the room-temperature (RT) growth has not been developed. In this work, we developed the RT ALD of gallium oxide by using a remote plasma technique. We studied trimethylgallium (TMG) adsorption and its oxidization on gallium oxide surfaces at RT by infrared absorption spectroscopy (IRAS). Based on the adsorption and oxidization characteristics, we designed the room temperature ALD of Ga$_{2}$O$_{3}$. The IRAS indicated that TMG adsorbs on the gallium oxide surface by consuming the adsorption sites of surface hydroxyl groups even at RT and the remote plasma-excited water and oxygen vapor is effective in oxidizing the TMG adsorbed surface and regeneration of the adsorption sites for TMG. We successfully prepared Ga$_{2}$O$_{3}$ films on Si substrates at RT with a growth per cycle of 0.055,nm/cycle.

Nitrogen adsorption on thermally cleaned Si(100) surfaces by pure and plasma excited NH$_{3}$ is investigated by extit{in situ} IR absorption spectroscopy and ex-situ X-ray photoelectron spectroscopy with various temperatures from RT (25$^{circ}$C) to 800$^{circ}$C and with a treatment time of 5,min. The nitrogen coverage after the treatment varies according to the treatment temperature for both pure and plasma excited NH$_{3}$. In case of the pure NH$_{3}$, the nitrogen coverage is saturated as low as 0.13--0.25 mono layer (ML) while the growth of the nitride film commenced at 550$^{circ}$C. For the plasma excited NH$_{3}$, the saturation coverage was measured at 0.54,ML at RT and it remained unincreased from RT to 550$^{circ}$C. This indicates that the plasma excited NH$_{3}$ enhances the nitrogen adsorption near at RT. It is found that main species of N is Si$_{2}=$ NH in case of the plasma excited NH$_{3}$ at RT while the pure NH$_{3}$ treatment gives rise to the Si--NH$_{2}$ passivation with Si--H at RT. We discuss the mechanism of the nitrogen adsorption on Si(100) surfaces with the plasma excited NH$_{3}$ in comparison with the study on the pure NH$_{3}$ treatment.