Nitrogen Adsorption of Si(100) Surface by Plasma Excited Ammonia
Summary :
Nitrogen adsorption on thermally cleaned Si(100) surfaces by pure and plasma excited NH3 is investigated by in situ IR absorption spectroscopy and ex-situ X-ray photoelectron spectroscopy with various temperatures from RT (25°C) to 800°C and with a treatment time of 5 min. The nitrogen coverage after the treatment varies according to the treatment temperature for both pure and plasma excited NH3. In case of the pure NH3, the nitrogen coverage is saturated as low as 0.13–0.25 mono layer (ML) while the growth of the nitride film commenced at 550°C. For the plasma excited NH3, the saturation coverage was measured at 0.54 ML at RT and it remained unincreased from RT to 550°C. This indicates that the plasma excited NH3 enhances the nitrogen adsorption near at RT. It is found that main species of N is Si2= NH in case of the plasma excited NH3 at RT while the pure NH3 treatment gives rise to the Si–NH2 passivation with Si–H at RT. We discuss the mechanism of the nitrogen adsorption on Si(100) surfaces with the plasma excited NH3 in comparison with the study on the pure NH3 treatment.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E98-C No.5 pp.395-401
- Publication Date
- 2015/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E98.C.395
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
P. Pungboon PANSILA
Yamagata University
Kensaku KANOMATA
Yamagata University
Bashir AHMMAD
Yamagata University
Shigeru KUBOTA
Yamagata University
Fumihiko HIROSE
Yamagata University
Keyword
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P. Pungboon PANSILA, Kensaku KANOMATA, Bashir AHMMAD, Shigeru KUBOTA, Fumihiko HIROSE, "Nitrogen Adsorption of Si(100) Surface by Plasma Excited Ammonia" in IEICE TRANSACTIONS on Electronics,
vol. E98-C, no. 5, pp. 395-401, May 2015, doi: 10.1587/transele.E98.C.395.
Abstract: Nitrogen adsorption on thermally cleaned Si(100) surfaces by pure and plasma excited NH3 is investigated by in situ IR absorption spectroscopy and ex-situ X-ray photoelectron spectroscopy with various temperatures from RT (25°C) to 800°C and with a treatment time of 5 min. The nitrogen coverage after the treatment varies according to the treatment temperature for both pure and plasma excited NH3. In case of the pure NH3, the nitrogen coverage is saturated as low as 0.13–0.25 mono layer (ML) while the growth of the nitride film commenced at 550°C. For the plasma excited NH3, the saturation coverage was measured at 0.54 ML at RT and it remained unincreased from RT to 550°C. This indicates that the plasma excited NH3 enhances the nitrogen adsorption near at RT. It is found that main species of N is Si2= NH in case of the plasma excited NH3 at RT while the pure NH3 treatment gives rise to the Si–NH2 passivation with Si–H at RT. We discuss the mechanism of the nitrogen adsorption on Si(100) surfaces with the plasma excited NH3 in comparison with the study on the pure NH3 treatment.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E98.C.395/_p
Copy
@ARTICLE{e98-c_5_395,
author={P. Pungboon PANSILA, Kensaku KANOMATA, Bashir AHMMAD, Shigeru KUBOTA, Fumihiko HIROSE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Nitrogen Adsorption of Si(100) Surface by Plasma Excited Ammonia},
year={2015},
volume={E98-C},
number={5},
pages={395-401},
abstract={Nitrogen adsorption on thermally cleaned Si(100) surfaces by pure and plasma excited NH3 is investigated by in situ IR absorption spectroscopy and ex-situ X-ray photoelectron spectroscopy with various temperatures from RT (25°C) to 800°C and with a treatment time of 5 min. The nitrogen coverage after the treatment varies according to the treatment temperature for both pure and plasma excited NH3. In case of the pure NH3, the nitrogen coverage is saturated as low as 0.13–0.25 mono layer (ML) while the growth of the nitride film commenced at 550°C. For the plasma excited NH3, the saturation coverage was measured at 0.54 ML at RT and it remained unincreased from RT to 550°C. This indicates that the plasma excited NH3 enhances the nitrogen adsorption near at RT. It is found that main species of N is Si2= NH in case of the plasma excited NH3 at RT while the pure NH3 treatment gives rise to the Si–NH2 passivation with Si–H at RT. We discuss the mechanism of the nitrogen adsorption on Si(100) surfaces with the plasma excited NH3 in comparison with the study on the pure NH3 treatment.},
keywords={},
doi={10.1587/transele.E98.C.395},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Nitrogen Adsorption of Si(100) Surface by Plasma Excited Ammonia
T2 - IEICE TRANSACTIONS on Electronics
SP - 395
EP - 401
AU - P. Pungboon PANSILA
AU - Kensaku KANOMATA
AU - Bashir AHMMAD
AU - Shigeru KUBOTA
AU - Fumihiko HIROSE
PY - 2015
DO - 10.1587/transele.E98.C.395
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E98-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2015
AB - Nitrogen adsorption on thermally cleaned Si(100) surfaces by pure and plasma excited NH3 is investigated by in situ IR absorption spectroscopy and ex-situ X-ray photoelectron spectroscopy with various temperatures from RT (25°C) to 800°C and with a treatment time of 5 min. The nitrogen coverage after the treatment varies according to the treatment temperature for both pure and plasma excited NH3. In case of the pure NH3, the nitrogen coverage is saturated as low as 0.13–0.25 mono layer (ML) while the growth of the nitride film commenced at 550°C. For the plasma excited NH3, the saturation coverage was measured at 0.54 ML at RT and it remained unincreased from RT to 550°C. This indicates that the plasma excited NH3 enhances the nitrogen adsorption near at RT. It is found that main species of N is Si2= NH in case of the plasma excited NH3 at RT while the pure NH3 treatment gives rise to the Si–NH2 passivation with Si–H at RT. We discuss the mechanism of the nitrogen adsorption on Si(100) surfaces with the plasma excited NH3 in comparison with the study on the pure NH3 treatment.
ER -
English
