We present measurements of Gate-Induced-Drain-Leak-age at various temperatures and terminal biases. Besides Band-to-Band tunneling leakage observed at high Drain-to-Gate voltage VDG, we also observed Trap-Assisted-Tunneling leakage current at lower VDG. Based on ISE TCAD simulations of the electric field, we propose analytical models for Band-to-Band and Trap-Assisted Gate-Induced-Drain-Leakage currents suitable for compact modeling.