Characterization and Modeling of Gate-Induced-Drain-Leakage

Fabien GILIBERT; Denis RIDEAU; Alexandre DRAY; Francois AGUT; Michel MINONDO; Andre JUGE; Pascal MASSON; Rachid BOUCHAKOUR

doi:10.1093/ietele/e88-c.5.829

Characterization and Modeling of Gate-Induced-Drain-Leakage

Fabien GILIBERT, Denis RIDEAU, Alexandre DRAY, Francois AGUT, Michel MINONDO, Andre JUGE, Pascal MASSON, Rachid BOUCHAKOUR

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We present measurements of Gate-Induced-Drain-Leak-age at various temperatures and terminal biases. Besides Band-to-Band tunneling leakage observed at high Drain-to-Gate voltage V_DG, we also observed Trap-Assisted-Tunneling leakage current at lower V_DG. Based on ISE TCAD simulations of the electric field, we propose analytical models for Band-to-Band and Trap-Assisted Gate-Induced-Drain-Leakage currents suitable for compact modeling.

Publication: IEICE TRANSACTIONS on Electronics Vol.E88-C No.5 pp.829-837

Publication Date: 2005/05/01

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DOI: 10.1093/ietele/e88-c.5.829

Type of Manuscript: Special Section PAPER (Special Section on Microelectronic Test Structures)

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Fabien GILIBERT, Denis RIDEAU, Alexandre DRAY, Francois AGUT, Michel MINONDO, Andre JUGE, Pascal MASSON, Rachid BOUCHAKOUR, "Characterization and Modeling of Gate-Induced-Drain-Leakage" in IEICE TRANSACTIONS on Electronics, vol. E88-C, no. 5, pp. 829-837, May 2005, doi: 10.1093/ietele/e88-c.5.829.
Abstract: We present measurements of Gate-Induced-Drain-Leak-age at various temperatures and terminal biases. Besides Band-to-Band tunneling leakage observed at high Drain-to-Gate voltage V_DG, we also observed Trap-Assisted-Tunneling leakage current at lower V_DG. Based on ISE TCAD simulations of the electric field, we propose analytical models for Band-to-Band and Trap-Assisted Gate-Induced-Drain-Leakage currents suitable for compact modeling.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.5.829/_p

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@ARTICLE{e88-c_5_829,
author={Fabien GILIBERT, Denis RIDEAU, Alexandre DRAY, Francois AGUT, Michel MINONDO, Andre JUGE, Pascal MASSON, Rachid BOUCHAKOUR, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization and Modeling of Gate-Induced-Drain-Leakage},
year={2005},
volume={E88-C},
number={5},
pages={829-837},
abstract={We present measurements of Gate-Induced-Drain-Leak-age at various temperatures and terminal biases. Besides Band-to-Band tunneling leakage observed at high Drain-to-Gate voltage V_DG, we also observed Trap-Assisted-Tunneling leakage current at lower V_DG. Based on ISE TCAD simulations of the electric field, we propose analytical models for Band-to-Band and Trap-Assisted Gate-Induced-Drain-Leakage currents suitable for compact modeling.},
keywords={},
doi={10.1093/ietele/e88-c.5.829},
ISSN={},
month={May},}

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TY - JOUR
TI - Characterization and Modeling of Gate-Induced-Drain-Leakage
T2 - IEICE TRANSACTIONS on Electronics
SP - 829
EP - 837
AU - Fabien GILIBERT
AU - Denis RIDEAU
AU - Alexandre DRAY
AU - Francois AGUT
AU - Michel MINONDO
AU - Andre JUGE
AU - Pascal MASSON
AU - Rachid BOUCHAKOUR
PY - 2005
DO - 10.1093/ietele/e88-c.5.829
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2005
AB - We present measurements of Gate-Induced-Drain-Leak-age at various temperatures and terminal biases. Besides Band-to-Band tunneling leakage observed at high Drain-to-Gate voltage V_DG, we also observed Trap-Assisted-Tunneling leakage current at lower V_DG. Based on ISE TCAD simulations of the electric field, we propose analytical models for Band-to-Band and Trap-Assisted Gate-Induced-Drain-Leakage currents suitable for compact modeling.
ER -