Key fabrication technology for the Pt/TiO2-x/TiO2/TiO2+x/Pt nano-film memristor is investigated, including preparing platinum (Pt) electrodes and TiO2-x/TiO2/TiO2+x nano-films. The effect of oxygen flow rate and deposition rate during fabrication on O:Ti ratio of thin films is demonstrated. The fabricated nano-films with different oxygen concentration are validated by the analyzed results from X-ray photoelectron spectroscopy (XPS). The obtained memristor device shows the typical resistive switching behavior and nonvolatile memory effects. An analytical device model for Pt/TiO2-x/TiO2/TiO2+x/Pt nano-film memristor is developed based on the fundamental linear relationships between drift-diffusion velocity and the electric field, and boundary conditions are also incorporated in this model. This model is able to predict the relation between variables in the form of explicit formula, which is very critical in memristor-based circuit designs. The measurement results from real devices validate the proposed analytical device model. Some deviations of the model from the measured data are also analyzed and discussed.