We propose a novel InGaAsP semiconductor laser which theoretically exhibits a high differential gain. The proposed semiconductor laser contains an asymmetric double quantum well structure as the active region. The differential gain enhancement invokes resonant tunneling of heavy holes in the asymmetric double quantum well structure, which takes place on the way of carrier injection process. The proposed laser is expected to be far more efficient in reducing pulse width and spectral broadening (chirping) than conventional multiquantum well lasers when driven by the gain switching method.