A Design Consideration of Gain-Switching Semiconductor Lasers
Summary :
We propose a novel InGaAsP semiconductor laser which theoretically exhibits a high differential gain. The proposed semiconductor laser contains an asymmetric double quantum well structure as the active region. The differential gain enhancement invokes resonant tunneling of heavy holes in the asymmetric double quantum well structure, which takes place on the way of carrier injection process. The proposed laser is expected to be far more efficient in reducing pulse width and spectral broadening (chirping) than conventional multiquantum well lasers when driven by the gain switching method.
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- IEICE TRANSACTIONS on Electronics Vol.E81-C No.2 pp.160-165
- Publication Date
- 1998/02/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Ultrashort Optical Pulse Technologies and their Applications)
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Yoshinori NOMURA, Toshiro ISU, Seiji OCHI, "A Design Consideration of Gain-Switching Semiconductor Lasers" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 2, pp. 160-165, February 1998, doi: .
Abstract: We propose a novel InGaAsP semiconductor laser which theoretically exhibits a high differential gain. The proposed semiconductor laser contains an asymmetric double quantum well structure as the active region. The differential gain enhancement invokes resonant tunneling of heavy holes in the asymmetric double quantum well structure, which takes place on the way of carrier injection process. The proposed laser is expected to be far more efficient in reducing pulse width and spectral broadening (chirping) than conventional multiquantum well lasers when driven by the gain switching method.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_2_160/_p
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@ARTICLE{e81-c_2_160,
author={Yoshinori NOMURA, Toshiro ISU, Seiji OCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Design Consideration of Gain-Switching Semiconductor Lasers},
year={1998},
volume={E81-C},
number={2},
pages={160-165},
abstract={We propose a novel InGaAsP semiconductor laser which theoretically exhibits a high differential gain. The proposed semiconductor laser contains an asymmetric double quantum well structure as the active region. The differential gain enhancement invokes resonant tunneling of heavy holes in the asymmetric double quantum well structure, which takes place on the way of carrier injection process. The proposed laser is expected to be far more efficient in reducing pulse width and spectral broadening (chirping) than conventional multiquantum well lasers when driven by the gain switching method.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - A Design Consideration of Gain-Switching Semiconductor Lasers
T2 - IEICE TRANSACTIONS on Electronics
SP - 160
EP - 165
AU - Yoshinori NOMURA
AU - Toshiro ISU
AU - Seiji OCHI
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1998
AB - We propose a novel InGaAsP semiconductor laser which theoretically exhibits a high differential gain. The proposed semiconductor laser contains an asymmetric double quantum well structure as the active region. The differential gain enhancement invokes resonant tunneling of heavy holes in the asymmetric double quantum well structure, which takes place on the way of carrier injection process. The proposed laser is expected to be far more efficient in reducing pulse width and spectral broadening (chirping) than conventional multiquantum well lasers when driven by the gain switching method.
ER -
English
