We have fabricated Nb/AlOx/Nb Josephson tunnel junctions by a sputtering apparatus with a load-lock system. This sputtering apparatus had the sub chamber for preparation and the main chamber for sputtering. The substrate temperature was confirmed to be kept less than 85 during Nb sputtering at the deposition rate of 1.18 nm/s for 7 minutes. The junctions that had 50µm50 µm area successfully showed the Vm value (the product of the critical current and the subgap resistance at 2 mV) as high as 50 mV at the current density of 100 A/cm2.