We have fabricated Nb/AlOx/Nb Josephson tunnel junctions by a sputtering apparatus with a load-lock system. This sputtering apparatus had the sub chamber for preparation and the main chamber for sputtering. The substrate temperature was confirmed to be kept less than 85
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Akiyoshi NAKAYAMA, Naoki INABA, Shigenori SAWACHI, Kazunari ISHIZU, Yoichi OKABE, "Fabrication of Nb/AlOx/Nb Josephson Tunnel Junctions by Sputtering Apparatus with Load-Lock System" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 8, pp. 1164-1168, August 1994, doi: .
Abstract: We have fabricated Nb/AlOx/Nb Josephson tunnel junctions by a sputtering apparatus with a load-lock system. This sputtering apparatus had the sub chamber for preparation and the main chamber for sputtering. The substrate temperature was confirmed to be kept less than 85
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_8_1164/_p
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@ARTICLE{e77-c_8_1164,
author={Akiyoshi NAKAYAMA, Naoki INABA, Shigenori SAWACHI, Kazunari ISHIZU, Yoichi OKABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fabrication of Nb/AlOx/Nb Josephson Tunnel Junctions by Sputtering Apparatus with Load-Lock System},
year={1994},
volume={E77-C},
number={8},
pages={1164-1168},
abstract={We have fabricated Nb/AlOx/Nb Josephson tunnel junctions by a sputtering apparatus with a load-lock system. This sputtering apparatus had the sub chamber for preparation and the main chamber for sputtering. The substrate temperature was confirmed to be kept less than 85
keywords={},
doi={},
ISSN={},
month={August},}
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TY - JOUR
TI - Fabrication of Nb/AlOx/Nb Josephson Tunnel Junctions by Sputtering Apparatus with Load-Lock System
T2 - IEICE TRANSACTIONS on Electronics
SP - 1164
EP - 1168
AU - Akiyoshi NAKAYAMA
AU - Naoki INABA
AU - Shigenori SAWACHI
AU - Kazunari ISHIZU
AU - Yoichi OKABE
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1994
AB - We have fabricated Nb/AlOx/Nb Josephson tunnel junctions by a sputtering apparatus with a load-lock system. This sputtering apparatus had the sub chamber for preparation and the main chamber for sputtering. The substrate temperature was confirmed to be kept less than 85
ER -