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[Author] Shunichi SUZUKI(2hit)

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  • Improving Reliability of Spectrum Analysis for Software Quality Requirements Using TCM

    Haruhiko KAIYA  Masaaki TANIGAWA  Shunichi SUZUKI  Tomonori SATO  Akira OSADA  Kenji KAIJIRI  

     
    PAPER-Requirements Engineering

      Vol:
    E93-D No:4
      Page(s):
    702-712

    Quality requirements are scattered over a requirements specification, thus it is hard to measure and trace such quality requirements to validate the specification against stakeholders' needs. We proposed a technique called "spectrum analysis for quality requirements" which enabled analysts to sort a requirements specification to measure and track quality requirements in the specification. In the same way as a spectrum in optics, a quality spectrum of a specification shows a quantitative feature of the specification with respect to quality. Therefore, we can compare a specification of a system to another one with respect to quality. As a result, we can validate such a specification because we can check whether the specification has common quality features and know its specific features against specifications of existing similar systems. However, our first spectrum analysis for quality requirements required a lot of effort and knowledge of a problem domain and it was hard to reuse such knowledge to reduce the effort. We thus introduce domain knowledge called term-characteristic map (TCM) to reuse the knowledge for our quality spectrum analysis. Through several experiments, we evaluate our spectrum analysis, and main finding are as follows. First, we confirmed specifications of similar systems have similar quality spectra. Second, results of spectrum analysis using TCM are objective, i.e., different analysts can generate almost the same spectra when they analyze the same specification.

  • A 65 Kbit Dynamic RAM Using Short Channel MOS FETs

    Masahide TAKADA  Toshio TAKESHIMA  Shunichi SUZUKI  Mitsuru SAKAMOTO  

     
    LETTER-Integrated Circuits

      Vol:
    E62-E No:7
      Page(s):
    484-485

    A 65 Kbit dynamic MOSRAM has been realized using short channel and single-level Si-gate technologies and a newly designed, highly sensitive and low power dissipation sense amplifier. Access time and power dissipation are 150 ns and 120 mW, respectively.