This paper presents an advanced quad-band multi-chip power amplifier module with unique linear output power dependency to the control voltage. It was developed for GSM850/900 MHz and DCS1800/PCS1900 MHz handset applications. The module was made on 10 mm by 10 mm substrate, which combined an InGaP HBT GSM, and DCS power amplifier ICs, two integrated couplers, a dual-band logarithmic RF power detector and some additional passive components. The logarithmic RF power detector was implemented in the module using state-of-the-art Si technology to accomplish the linear power dependency. With the logarithmic RF power detector approach we achieved more than 50 dB linear output power control range. The output power in dBm is a linear function of a control voltage; therefore there is no need for the Original Equipment Manufacture to design a power control circuitry. This is a very desirable feature to many handset designers who want to significantly reduce the handset board size, design cost, and time-to-market. The approach allows the handset manufacturer to calibrate the output power at two points with error of less than 0.3 dB, thus significantly reducing test time in mass production. Under a low single supply voltage of 3.2 V the module provides 35 dBm output power, 55% PAE in GSM900 band and 33 dBm, 50% PAE in DCS1800 band.