This paper presents an advanced quad-band multi-chip power amplifier module with unique linear output power dependency to the control voltage. It was developed for GSM850/900 MHz and DCS1800/PCS1900 MHz handset applications. The module was made on 10 mm by 10 mm substrate, which combined an InGaP HBT GSM, and DCS power amplifier ICs, two integrated couplers, a dual-band logarithmic RF power detector and some additional passive components. The logarithmic RF power detector was implemented in the module using state-of-the-art Si technology to accomplish the linear power dependency. With the logarithmic RF power detector approach we achieved more than 50 dB linear output power control range. The output power in dBm is a linear function of a control voltage; therefore there is no need for the Original Equipment Manufacture to design a power control circuitry. This is a very desirable feature to many handset designers who want to significantly reduce the handset board size, design cost, and time-to-market. The approach allows the handset manufacturer to calibrate the output power at two points with error of less than
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Shuyun ZHANG, Pavel BRETCHKO, Julius MOKORO, Rob McMORROW, "An Advanced Power Amplifier Module for Quad-Band Wireless Applications" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 8, pp. 1506-1511, August 2003, doi: .
Abstract: This paper presents an advanced quad-band multi-chip power amplifier module with unique linear output power dependency to the control voltage. It was developed for GSM850/900 MHz and DCS1800/PCS1900 MHz handset applications. The module was made on 10 mm by 10 mm substrate, which combined an InGaP HBT GSM, and DCS power amplifier ICs, two integrated couplers, a dual-band logarithmic RF power detector and some additional passive components. The logarithmic RF power detector was implemented in the module using state-of-the-art Si technology to accomplish the linear power dependency. With the logarithmic RF power detector approach we achieved more than 50 dB linear output power control range. The output power in dBm is a linear function of a control voltage; therefore there is no need for the Original Equipment Manufacture to design a power control circuitry. This is a very desirable feature to many handset designers who want to significantly reduce the handset board size, design cost, and time-to-market. The approach allows the handset manufacturer to calibrate the output power at two points with error of less than
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_8_1506/_p
Copy
@ARTICLE{e86-c_8_1506,
author={Shuyun ZHANG, Pavel BRETCHKO, Julius MOKORO, Rob McMORROW, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Advanced Power Amplifier Module for Quad-Band Wireless Applications},
year={2003},
volume={E86-C},
number={8},
pages={1506-1511},
abstract={This paper presents an advanced quad-band multi-chip power amplifier module with unique linear output power dependency to the control voltage. It was developed for GSM850/900 MHz and DCS1800/PCS1900 MHz handset applications. The module was made on 10 mm by 10 mm substrate, which combined an InGaP HBT GSM, and DCS power amplifier ICs, two integrated couplers, a dual-band logarithmic RF power detector and some additional passive components. The logarithmic RF power detector was implemented in the module using state-of-the-art Si technology to accomplish the linear power dependency. With the logarithmic RF power detector approach we achieved more than 50 dB linear output power control range. The output power in dBm is a linear function of a control voltage; therefore there is no need for the Original Equipment Manufacture to design a power control circuitry. This is a very desirable feature to many handset designers who want to significantly reduce the handset board size, design cost, and time-to-market. The approach allows the handset manufacturer to calibrate the output power at two points with error of less than
keywords={},
doi={},
ISSN={},
month={August},}
Copy
TY - JOUR
TI - An Advanced Power Amplifier Module for Quad-Band Wireless Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1506
EP - 1511
AU - Shuyun ZHANG
AU - Pavel BRETCHKO
AU - Julius MOKORO
AU - Rob McMORROW
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2003
AB - This paper presents an advanced quad-band multi-chip power amplifier module with unique linear output power dependency to the control voltage. It was developed for GSM850/900 MHz and DCS1800/PCS1900 MHz handset applications. The module was made on 10 mm by 10 mm substrate, which combined an InGaP HBT GSM, and DCS power amplifier ICs, two integrated couplers, a dual-band logarithmic RF power detector and some additional passive components. The logarithmic RF power detector was implemented in the module using state-of-the-art Si technology to accomplish the linear power dependency. With the logarithmic RF power detector approach we achieved more than 50 dB linear output power control range. The output power in dBm is a linear function of a control voltage; therefore there is no need for the Original Equipment Manufacture to design a power control circuitry. This is a very desirable feature to many handset designers who want to significantly reduce the handset board size, design cost, and time-to-market. The approach allows the handset manufacturer to calibrate the output power at two points with error of less than
ER -