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[Author] Tadashi ISHIGAKI(1hit)

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  • Crystal Growth of Silicate Phosphors from the Vapor Phase Open Access

    Tadashi ISHIGAKI  Kenji TODA  Tatsuya SAKAMOTO  Kazuyoshi UEMATSU  Mineo SATO  

     
    INVITED PAPER

      Vol:
    E94-C No:11
      Page(s):
    1745-1748

    Well-crystallized Ba2SiO4:Eu2+ powders were grown on a substrate by the vapor phase reaction between a mixed powder (barium carbonate and europium oxide) and SiO gas. The vaporization of SiO occurs at 1400–1600 from the SiO2 source (or SiO powder) in a reducing atmosphere. The formed SiO gas was transported by 95 vol% Ar - 5 vol% H2 gas and reacted with the raw material powders. The emission intensity of the Ba2SiO4:Eu2 + phosphor synthesized by the new vapor phase technique is about 2.6 times higher than that of a conventional solid-state reaction sample.