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Crystal Growth of Silicate Phosphors from the Vapor Phase
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Summary :
Well-crystallized Ba2SiO4:Eu2+ powders were grown on a substrate by the vapor phase reaction between a mixed powder (barium carbonate and europium oxide) and SiO gas. The vaporization of SiO occurs at 1400–1600
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.11 pp.1745-1748
- Publication Date
- 2011/11/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.1745
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Electronic Displays)
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Tadashi ISHIGAKI, Kenji TODA, Tatsuya SAKAMOTO, Kazuyoshi UEMATSU, Mineo SATO, "Crystal Growth of Silicate Phosphors from the Vapor Phase" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 11, pp. 1745-1748, November 2011, doi: 10.1587/transele.E94.C.1745.
Abstract: Well-crystallized Ba2SiO4:Eu2+ powders were grown on a substrate by the vapor phase reaction between a mixed powder (barium carbonate and europium oxide) and SiO gas. The vaporization of SiO occurs at 1400–1600
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.1745/_p
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@ARTICLE{e94-c_11_1745,
author={Tadashi ISHIGAKI, Kenji TODA, Tatsuya SAKAMOTO, Kazuyoshi UEMATSU, Mineo SATO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Crystal Growth of Silicate Phosphors from the Vapor Phase},
year={2011},
volume={E94-C},
number={11},
pages={1745-1748},
abstract={Well-crystallized Ba2SiO4:Eu2+ powders were grown on a substrate by the vapor phase reaction between a mixed powder (barium carbonate and europium oxide) and SiO gas. The vaporization of SiO occurs at 1400–1600
keywords={},
doi={10.1587/transele.E94.C.1745},
ISSN={1745-1353},
month={November},}
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TY - JOUR
TI - Crystal Growth of Silicate Phosphors from the Vapor Phase
T2 - IEICE TRANSACTIONS on Electronics
SP - 1745
EP - 1748
AU - Tadashi ISHIGAKI
AU - Kenji TODA
AU - Tatsuya SAKAMOTO
AU - Kazuyoshi UEMATSU
AU - Mineo SATO
PY - 2011
DO - 10.1587/transele.E94.C.1745
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2011
AB - Well-crystallized Ba2SiO4:Eu2+ powders were grown on a substrate by the vapor phase reaction between a mixed powder (barium carbonate and europium oxide) and SiO gas. The vaporization of SiO occurs at 1400–1600
ER -
English
