We report good responsivity at the wavelength of 1600nm in a Ge photodetector which had lateral p-i-n structure and butt-joint coupling structure based on conventional normal complementary metal oxide semiconductor processes. We experimentally verified the responsivity of 0.82A/W and 0.71A/W on the best and the worst polarizations, respectively. The butt joint lateral p-i-n structure is found to be polarization independent as compared with vertical ones. Although cut-off frequency was 2.3-2.4GHz at reverse bias 3V, clearly open eye diagram at 10Gbps was obtained with reverse bias over 12V. These results are promising as optical photodetectors to receive long wavelengths downstream signal wavelengths required for next-generation optical access network systems.

In this report we present all-optical switches and modulators based on the intersubband transition in semiconductor quantum wells. The use of InGaAs/AlAsSb coupled double quantum well structures is proposed to facilitate intersubband transitions in the optical-communication band, and to reduce the intersubband absorption recovery time from several picoseconds to a few hundred femtoseconds by utilizing enhanced electron-phonon scattering. Subpicosecond all-optical gating and modulation in coupled double quantum wells are observed using pump-probe experiments at optical-communication wavelengths. The results indicate that the intersubband transition in this structure is very useful for ultrafast all-optical switching devices.