Waveguide Butt-Joint Germanium Photodetector with Lateral PIN Structure for 1600nm Wavelengths Receiving
Summary :
We report good responsivity at the wavelength of 1600nm in a Ge photodetector which had lateral p-i-n structure and butt-joint coupling structure based on conventional normal complementary metal oxide semiconductor processes. We experimentally verified the responsivity of 0.82A/W and 0.71A/W on the best and the worst polarizations, respectively. The butt joint lateral p-i-n structure is found to be polarization independent as compared with vertical ones. Although cut-off frequency was 2.3-2.4GHz at reverse bias 3V, clearly open eye diagram at 10Gbps was obtained with reverse bias over 12V. These results are promising as optical photodetectors to receive long wavelengths downstream signal wavelengths required for next-generation optical access network systems.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E101-C No.6 pp.409-415
- Publication Date
- 2018/06/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E101.C.409
- Type of Manuscript
- PAPER
- Category
- Optoelectronics
Authors
Hideki ONO
Photonics Electronics Technology Research Association (PETRA)
Takasi SIMOYAMA
Photonics Electronics Technology Research Association (PETRA)
Shigekazu OKUMURA
Photonics Electronics Technology Research Association (PETRA)
Masahiko IMAI
Photonics Electronics Technology Research Association (PETRA)
Hiroki YAEGASHI
Photonics Electronics Technology Research Association (PETRA)
Hironori SASAKI
Photonics Electronics Technology Research Association (PETRA)
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Hideki ONO, Takasi SIMOYAMA, Shigekazu OKUMURA, Masahiko IMAI, Hiroki YAEGASHI, Hironori SASAKI, "Waveguide Butt-Joint Germanium Photodetector with Lateral PIN Structure for 1600nm Wavelengths Receiving" in IEICE TRANSACTIONS on Electronics,
vol. E101-C, no. 6, pp. 409-415, June 2018, doi: 10.1587/transele.E101.C.409.
Abstract: We report good responsivity at the wavelength of 1600nm in a Ge photodetector which had lateral p-i-n structure and butt-joint coupling structure based on conventional normal complementary metal oxide semiconductor processes. We experimentally verified the responsivity of 0.82A/W and 0.71A/W on the best and the worst polarizations, respectively. The butt joint lateral p-i-n structure is found to be polarization independent as compared with vertical ones. Although cut-off frequency was 2.3-2.4GHz at reverse bias 3V, clearly open eye diagram at 10Gbps was obtained with reverse bias over 12V. These results are promising as optical photodetectors to receive long wavelengths downstream signal wavelengths required for next-generation optical access network systems.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.409/_p
Copy
@ARTICLE{e101-c_6_409,
author={Hideki ONO, Takasi SIMOYAMA, Shigekazu OKUMURA, Masahiko IMAI, Hiroki YAEGASHI, Hironori SASAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Waveguide Butt-Joint Germanium Photodetector with Lateral PIN Structure for 1600nm Wavelengths Receiving},
year={2018},
volume={E101-C},
number={6},
pages={409-415},
abstract={We report good responsivity at the wavelength of 1600nm in a Ge photodetector which had lateral p-i-n structure and butt-joint coupling structure based on conventional normal complementary metal oxide semiconductor processes. We experimentally verified the responsivity of 0.82A/W and 0.71A/W on the best and the worst polarizations, respectively. The butt joint lateral p-i-n structure is found to be polarization independent as compared with vertical ones. Although cut-off frequency was 2.3-2.4GHz at reverse bias 3V, clearly open eye diagram at 10Gbps was obtained with reverse bias over 12V. These results are promising as optical photodetectors to receive long wavelengths downstream signal wavelengths required for next-generation optical access network systems.},
keywords={},
doi={10.1587/transele.E101.C.409},
ISSN={1745-1353},
month={June},}
Copy
TY - JOUR
TI - Waveguide Butt-Joint Germanium Photodetector with Lateral PIN Structure for 1600nm Wavelengths Receiving
T2 - IEICE TRANSACTIONS on Electronics
SP - 409
EP - 415
AU - Hideki ONO
AU - Takasi SIMOYAMA
AU - Shigekazu OKUMURA
AU - Masahiko IMAI
AU - Hiroki YAEGASHI
AU - Hironori SASAKI
PY - 2018
DO - 10.1587/transele.E101.C.409
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2018
AB - We report good responsivity at the wavelength of 1600nm in a Ge photodetector which had lateral p-i-n structure and butt-joint coupling structure based on conventional normal complementary metal oxide semiconductor processes. We experimentally verified the responsivity of 0.82A/W and 0.71A/W on the best and the worst polarizations, respectively. The butt joint lateral p-i-n structure is found to be polarization independent as compared with vertical ones. Although cut-off frequency was 2.3-2.4GHz at reverse bias 3V, clearly open eye diagram at 10Gbps was obtained with reverse bias over 12V. These results are promising as optical photodetectors to receive long wavelengths downstream signal wavelengths required for next-generation optical access network systems.
ER -
English
