A supply voltage (VDD) independent temperature sensor circuit, which can be realized by the optimum combination of three current modes of n-MOSFETs including the subthreshold current using the feedback scheme from the temperature dependent voltage (VTD) output to the gates of three n-MOSFETs, was proposed and fabricated by a standard 1.2 µm n-well CMOS process. The circuit consists of only 17 MOSFETs without high resistors resulting in a small die area of 0.18 mm2. The temperature coefficient TC of the sensor circuit can be controlled by the channel length ratio L4/L3 of two n-MOSFETs. The average temperature sensor voltage VTS and its typical TC are 1.77 V at VDD=5.0 V (20) and 5.1 mV/ for VDD=5.01.0 V in the temperature range of -20-100 in case of L4/L3=9, respectively.