An analog vector quantization processor has been designed based on the neuron-MOS (νMOS) technology. In order to achieve a high integrating density, template information is merged into the matching cell (the absolute value circuitry) using the νMOS ROM technology. A new-architecture νMOS winner-take-all (WTA) circuit is employed for fully-parallel search for the minimum-distance vector. The WTA performs multi-resolution winner search with an automatic feedback gain control. A test chip having 256 16-element fixed template vectors has been built in a 1.5-µm double-polysilicon CMOS technology with the chip size of 7.2 mm 7.2 mm, and the basic operation of the circuits has been demonstrated.

We proposed the conduction mechanism of organic light-emitting diode (OLED) using a one-dimensional discontinuous model. We assumed that each emitting molecule corresponds to a hopping site according to the actual charge transfer between adjacent molecules. Both carrier mobility of Alq3 and barrier heights for each carrier were derived from experimental data. We calculate transient behavior of carrier, field, and exciton distribution. Both carrier injections assumed the Schottky injection. In the previous results, when we assumed that calculated current density fit the experimental one in the current density field curve, calculated light-emission intensity did not fit the experimental one in the light-emission field curve. Furthermore, the slope of the calculated light emission-field curve is too small to fit the experimental one. In the previous study, hopping distance was assumed to be 1 nm. In this study, it is assumed to be 1.7 nm. We consider that field dependence of electron injection is too weak to explain only the Schottky emission. When the electron injection is assumed to be both Schottky emission and Fowler-Nordheim emission calculated light-emission field as well as the current-density field curves were fit to the curve of each experimental characteristics.

In this study, we prepared red organic light- emitting-diode (OLED) with a fluorescent dye(Sq)-doped and inserted 1,3-bis (5-p-t-butylphenyl)-1,3,4-oxadiazol-2-yl) benzene (OXD7) or/and tris (8-hydroxyquinoline) aluminum (Alq3) layers between emission layer and cathode in order to increase electroluminescent (EL) efficiency. This inserting effect has been observed and EL mechanism characteristics have been examined. The hole transport layer was N,N'-diphenyl-N, N'bis-(3-methylphenyl)-1,1'diphenyl-4,4'-diamine (TPD); the host material of emission layer was Alq3; the guest material of emission layer was Sq. When Alq3 was inserted between the emission layer and the cathode, emission efficiency increased. Highly pure red emission, however, was not attaina ble with Alq3. On the other hand, the insertion of OXD7 between the two layers blocked and accumulated holes. Because of its increasing recombination probability of electron and hole, luminance characteristics and emission efficiency were improved with holding highly pure red color.

In this report, solar cell characteristics were evaluated by doping the active layer CH3NH3PbI3 (MAPbI3) with 3.0 vol% and 6.0 vol% of potassium ion (KI) in an inverse-structured perovskite solar cells (PSCs). The Tauc plots of the absorbance characteristics and the ionization potential characteristics show that the top end of the valence band shifted by 0.21eV in the shallow direction from -5.34eV to -5.13eV, and the energy band gap decreased from 1.530eV to 1.525eV. Also, the XRD measurements show that the lattice constant decreased from 8.96Å to 8.93Å when KI was doped. The decrease in the lattice constant indicates that a part of the A site is replaced from methylammonium ion (MAI) to KI. In the J-V characteristics of the solar cell, the mean value of Jsc improved from 7.0mA/cm2 without KI to 8.8mA/cm2 with 3.0 vol% of KI doped and to 10.2mA/cm2 with 6.0 vol% of KI doped. As a result, the mean value of power-conversion efficiency (PCE) without KI was 3.5%, but the mean value of PCE improved to 5.2% with 3.0 vol% of KI doped and to 4.5% with 6.0 vol% of KI doped. Thus, it has shown that it is effective to dope KI to MAIPBI3, which serves as the active layer, even in the inverse-structured PSCs.