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Marc ULLMANN Holger GOEBEL Heinz HOENIGSCHMID Thomas HANEDER
A BSIM3v3 based ferroelectric memory field effect transistor (FEMFET) compact model for circuit simulation is presented. Its analytical approach is based on the MOS capacitor equations taking into account the influence of a ferroelectric polarization. The hysteresis behavior of the gate ferroelectric has been modeled by using the distribution function integral method (DFIM). The parameters for the presented simulations were extracted by measurements on MIS and MFIS structures.