A BSIM3v3 and DFIM Based Ferroelectric Field Effect Transistor Model
Summary :
A BSIM3v3 based ferroelectric memory field effect transistor (FEMFET) compact model for circuit simulation is presented. Its analytical approach is based on the MOS capacitor equations taking into account the influence of a ferroelectric polarization. The hysteresis behavior of the gate ferroelectric has been modeled by using the distribution function integral method (DFIM). The parameters for the presented simulations were extracted by measurements on MIS and MFIS structures.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E83-C No.8 pp.1324-1330
- Publication Date
- 2000/08/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
- Category
- Circuit Applications
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Marc ULLMANN, Holger GOEBEL, Heinz HOENIGSCHMID, Thomas HANEDER, "A BSIM3v3 and DFIM Based Ferroelectric Field Effect Transistor Model" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 8, pp. 1324-1330, August 2000, doi: .
Abstract: A BSIM3v3 based ferroelectric memory field effect transistor (FEMFET) compact model for circuit simulation is presented. Its analytical approach is based on the MOS capacitor equations taking into account the influence of a ferroelectric polarization. The hysteresis behavior of the gate ferroelectric has been modeled by using the distribution function integral method (DFIM). The parameters for the presented simulations were extracted by measurements on MIS and MFIS structures.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_8_1324/_p
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@ARTICLE{e83-c_8_1324,
author={Marc ULLMANN, Holger GOEBEL, Heinz HOENIGSCHMID, Thomas HANEDER, },
journal={IEICE TRANSACTIONS on Electronics},
title={A BSIM3v3 and DFIM Based Ferroelectric Field Effect Transistor Model},
year={2000},
volume={E83-C},
number={8},
pages={1324-1330},
abstract={A BSIM3v3 based ferroelectric memory field effect transistor (FEMFET) compact model for circuit simulation is presented. Its analytical approach is based on the MOS capacitor equations taking into account the influence of a ferroelectric polarization. The hysteresis behavior of the gate ferroelectric has been modeled by using the distribution function integral method (DFIM). The parameters for the presented simulations were extracted by measurements on MIS and MFIS structures.},
keywords={},
doi={},
ISSN={},
month={August},}
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TY - JOUR
TI - A BSIM3v3 and DFIM Based Ferroelectric Field Effect Transistor Model
T2 - IEICE TRANSACTIONS on Electronics
SP - 1324
EP - 1330
AU - Marc ULLMANN
AU - Holger GOEBEL
AU - Heinz HOENIGSCHMID
AU - Thomas HANEDER
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2000
AB - A BSIM3v3 based ferroelectric memory field effect transistor (FEMFET) compact model for circuit simulation is presented. Its analytical approach is based on the MOS capacitor equations taking into account the influence of a ferroelectric polarization. The hysteresis behavior of the gate ferroelectric has been modeled by using the distribution function integral method (DFIM). The parameters for the presented simulations were extracted by measurements on MIS and MFIS structures.
ER -
English
