We report the control of threshold voltage (Vth) for low voltage (5V) operation in OFET by using double gate dielectric layers composed of poly (vinyl cinnamate) and SiO2. We succeeded in realizing a driving voltage of -5V and Vth shift by c.a. 1.0V. And programmed Vth was almost unchanged for 104s, where the relative change of Vth remains more than 99%.

We have demonstrated tunable extit{n}-channel fullerene and extit{p}-channel pentacene OFETs and CMOS inverter circuit based on a bilayer-dielectric structure of CYTOP (poly(perfluoroalkenyl vinyl ether)) electret and SiO$_{2}$. For both OFET types, the $V_{mathrm{th}}$ can be electrically tuned thanks to the charge-trapping at the interface of CYTOP and SiO$_{2}$. The stability of the shifted $V_{mathrm{th}}$ was investigated through monitoring a change in transistor current. The measured transistor current versus time after programming fitted very well with a stretched-exponential distribution with a long time constant up to 10$^{6}$ s. For organic CMOS inverter, after applying the program gate voltages for extit{n}-channel fullerene or extit{p}-channel pentacene elements, the voltage transfer characteristics were shifted toward more positive values, resulting in a modulation of the noise margin. We realized that at a program gate voltage of 60,V for extit{p}-channel OFET, the circuit switched at 4, 8,V, that is close to half supply voltage $V_{mathrm{DD}}$, leading to the maximum electrical noise immunity of the inverter circuit.