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[Author] Toshihiro TANAKA(2hit)

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  • RF Properties of the Coupling Circuit between dc SQUID and Multiturn Input Coil

    Keiji ENPUKU  Toshihiro TANAKA  Keiji YOSHIDA  

     
    PAPER

      Vol:
    E74-C No:7
      Page(s):
    2020-2028

    Rf properties of the coupling circuit between the dc SQUID and the multiturn input coil have been studied in order to investigate the origin of the degradation of the SQUID characteristics due to the input coil. It is pointed out that rf properties of the coupling circuit become important due to the existence of the rf currents generated from Jasephson junctions. The rf properties of the coupling circuit have been measured by using the expanded model of the circuit with Cu electrodes. We observe that resonant structures appear in rf properties of the coupling circuit. This means that the SQUID coil coupled to the input coil can not be expressed by a simple inductance, as is not the case of the isolated SQUID. It is shown that the resonant structures result from the standing wave occurring in the coupling circuit. It is also shown that the resonant structures can be suppressed with the damping resistors. Based on the experimental results, a circuit model of the coupling circuit is obtained, which explains well the experimental results. The obtained results are useful to study the effect of the input coil on SQUID characteristics.

  • Programming and Program-Verification Methods for Low-Voltage Flash Memories Using a Sector Programming Scheme

    Katsutaka KIMURA  Toshihiro TANAKA  Masataka KATO  Tetsuo ADACHI  Keisuke OGURA  Hitoshi KUME  

     
    PAPER

      Vol:
    E78-C No:7
      Page(s):
    832-837

    Programming and program-verification methods for low-voltage flash memories using the Fowler-Nordheim tunneling mechanism for both programming and erasure are described. In these memories, a great many memory cells on a selected word line, such as 512-bytes worth of cells, are programmed at the same time for high-speed programming. The bit-by-bit programming/verification method can precisely control threshold-voltage deviation of programmed memory cells on the selected word line for low voltage operation. By using an internal program-end detection circuit, the completion of program mode can be checked for in one clock cycle, without reading out 512-bytes of data from the memory chip to the external controller. Moreover, the variable pulse-width programming method reduces the total number of verifications.