A 5.6-GHz 1-V balanced LC-tank Colpitts voltage controlled oscillator is designed and implemented with a TSMC 0.18-µm CMOS process. This proposed Colpitts VCO circuit adopts two single-ended complementary LC-tank VCOs coupled by two pairs of varactors. The proposed VCO operates at low power consumption because it has the same dc current path as the np-MOSFETs. The Measured results of the proposed VCO achieve tuning range of 670 MHz from 5.23 to 5.9 GHz while the controlled voltage is tuned from 0 to 1-V, phase noise of -118.8 dBc/Hz at 1 MHz offset frequency from the carrier of 5.6 GHz and output power of -10.97 dBm at the supply voltage of 1 V. The power consumption of the core circuit is 1.79 mW and the chip area including pads is 0.451 (0.55 0.82) mm2.

A 6–10-GHz broadband low noise amplifier (LNA) and transmitting amplifier (TA) for direct sequence ultra-wideband (DS-UWB) are presented. The LNA and TA are fabricated with the 0.18-µm 1P6M standard CMOS process. The CMOS LNA and TA are checked by on-wafer measurement with the DC supply voltage of 1.5 V. From 6–10 GHz, the broadband LNA exhibits a noise figure of 5.3–6.2 dB, a gain of 11–13.8 dB, a P1 dB of -15.7 - -10.8 dBm, a IIP3 of -5.5 - -1 dBm, a DC power consumption of 12 mW, and an input/output return loss higher than 11/12 dB, respectively. From 6–10 GHz, the broadband TA exhibits a gain of 7.6–10.5 dB, a OP1 dB of 2.8–6.1 dBm, a OIP3 of 12.3–15.1 dBm, and a PAE of 8.8–17.6% @ OP1 dB, and a η of 9.7–21.1% @ OP1 dB, and an input/output return loss higher than 6.8/3.2 dB, respectively.

In this paper, a fifth order curer low-pass filter using as switched-capacitor (SC) architecture is proposed and fabricated with TSMC 0.18 µm CMOS process. A fully differential SC is adopted via the bilinear transform of the corresponding analogue RLC passive prototype. To reach the largest possible input dynamic range and save chip area, the method of dynamic range scaling and minimum capacitor scaling is used. Measured results show that the proposed filter achieves a pass-band of 12.1 MHz with a sampling rate of 100 MHz, a SFDR of 50 dB, a stop-band attenuation greater than 50 dB and a power consumption of 48.5 mW at 1.8 V power supply. Including pads, the chip area occupies 1.515 (1.391.09) mm2. This paper has the feature of low noise, excellent linearity of the filter, and high stability. The experimental results show that it has perfect performance for WiMAX applications and standard is recommended.

In this paper, a 1.8-V 10-bit 100,MS/s successive approximation register (SAR) analog-to-digital converter (ADC) simulated in a TSMC 0.18-$mu$m CMOS process is presented. By applying ten comparators followed by an asynchronous trigger logic, the proposed SAR ADC achieves high speed operation. Compared to the conventional SAR ADC, there is no significant delay in the digital feedback logic in this design. With the sampling rate limited only by the ten delays of the capacitor DAC settling and comparators quantization, the proposed SAR ADC achieves a peak SNDR of 61.2,dB at 100,MS/s and 80,MS/s, consuming 3.2,mW and 3.1,mW respectively.