In this paper, a balance operation Transimpedance Amplifier (TIA) with low-noise has been implemented for optical receivers in 130 nm SiGe BiCMOS Technology, in which the optimal tradeoff emitter current density and the location of high-frequency noise corner were analyzed for acquiring low-noise performance. The Auto-Zero Feedback Loop (AZFL) without introducing unnecessary noises at input of the TIA, the tail current sink with high symmetries and the balance operation TIA with the shared output of Operational Amplifier (OpAmp) in AZFL were designed to keep balanced operation for the TIA. Moreover, cascode and shunt-feedback were also employed to expanding bandwidth and decreasing input referred noise. Besides, the formula for calculating high-frequency noise corner in Heterojunction Bipolar Transistor (HBT) TIA with shunt-feedback was derived. The electrical measurement was performed to validate the notions described in this work, appearing 9.6 pA/√Hz of input referred noise current Power Spectral Density (PSD), balance operation (VIN1=896mV, VIN2=896mV, VOUT1=1.978V, VOUT2=1.979V), bandwidth of 32GHz, overall transimpedance gain of 68.6dBΩ, a total 117mW power consumption and chip area of 484µm × 486µm.

This paper presents a 44 Gbit/s Transimpedance Amplifier (TIA) with wide-dynamic range and high-linearity for optical receiver fabricated in 130 nm BiCMOS technology. The TIA has the features of 67dBΩ overall transimpedance gain, a bandwidth of 28GHz, 10pA/√Hz of Input Referred Noise Current Power Spectral Density (IRNCPSD), and a power consumption of 95mW from a 2.5V supply. The Total Harmonic Distortion (THD) is less than 5% for a differential input current up to 2.63mApp, when the static input current is 0.1mA.