In this paper, a balance operation Transimpedance Amplifier (TIA) with low-noise has been implemented for optical receivers in 130 nm SiGe BiCMOS Technology, in which the optimal tradeoff emitter current density and the location of high-frequency noise corner were analyzed for acquiring low-noise performance. The Auto-Zero Feedback Loop (AZFL) without introducing unnecessary noises at input of the TIA, the tail current sink with high symmetries and the balance operation TIA with the shared output of Operational Amplifier (OpAmp) in AZFL were designed to keep balanced operation for the TIA. Moreover, cascode and shunt-feedback were also employed to expanding bandwidth and decreasing input referred noise. Besides, the formula for calculating high-frequency noise corner in Heterojunction Bipolar Transistor (HBT) TIA with shunt-feedback was derived. The electrical measurement was performed to validate the notions described in this work, appearing 9.6 pA/√Hz of input referred noise current Power Spectral Density (PSD), balance operation (VIN1=896mV, VIN2=896mV, VOUT1=1.978V, VOUT2=1.979V), bandwidth of 32GHz, overall transimpedance gain of 68.6dBΩ, a total 117mW power consumption and chip area of 484µm × 486µm.
Chao WANG
Hunan Institude of Engineering
Xianliang LUO
Hunan Institude of Engineering
Mohamed ATEF
United Arab Emirates University,Assiut University
Pan TANG
South East University
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Chao WANG, Xianliang LUO, Mohamed ATEF, Pan TANG, "A 32GHz 68dBΩ Low-Noise and Balance Operation Transimpedance Amplifier in 130nm SiGe BiCMOS for Optical Receivers" in IEICE TRANSACTIONS on Fundamentals,
vol. E103-A, no. 12, pp. 1408-1416, December 2020, doi: 10.1587/transfun.2020VLP0001.
Abstract: In this paper, a balance operation Transimpedance Amplifier (TIA) with low-noise has been implemented for optical receivers in 130 nm SiGe BiCMOS Technology, in which the optimal tradeoff emitter current density and the location of high-frequency noise corner were analyzed for acquiring low-noise performance. The Auto-Zero Feedback Loop (AZFL) without introducing unnecessary noises at input of the TIA, the tail current sink with high symmetries and the balance operation TIA with the shared output of Operational Amplifier (OpAmp) in AZFL were designed to keep balanced operation for the TIA. Moreover, cascode and shunt-feedback were also employed to expanding bandwidth and decreasing input referred noise. Besides, the formula for calculating high-frequency noise corner in Heterojunction Bipolar Transistor (HBT) TIA with shunt-feedback was derived. The electrical measurement was performed to validate the notions described in this work, appearing 9.6 pA/√Hz of input referred noise current Power Spectral Density (PSD), balance operation (VIN1=896mV, VIN2=896mV, VOUT1=1.978V, VOUT2=1.979V), bandwidth of 32GHz, overall transimpedance gain of 68.6dBΩ, a total 117mW power consumption and chip area of 484µm × 486µm.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/transfun.2020VLP0001/_p
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@ARTICLE{e103-a_12_1408,
author={Chao WANG, Xianliang LUO, Mohamed ATEF, Pan TANG, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={A 32GHz 68dBΩ Low-Noise and Balance Operation Transimpedance Amplifier in 130nm SiGe BiCMOS for Optical Receivers},
year={2020},
volume={E103-A},
number={12},
pages={1408-1416},
abstract={In this paper, a balance operation Transimpedance Amplifier (TIA) with low-noise has been implemented for optical receivers in 130 nm SiGe BiCMOS Technology, in which the optimal tradeoff emitter current density and the location of high-frequency noise corner were analyzed for acquiring low-noise performance. The Auto-Zero Feedback Loop (AZFL) without introducing unnecessary noises at input of the TIA, the tail current sink with high symmetries and the balance operation TIA with the shared output of Operational Amplifier (OpAmp) in AZFL were designed to keep balanced operation for the TIA. Moreover, cascode and shunt-feedback were also employed to expanding bandwidth and decreasing input referred noise. Besides, the formula for calculating high-frequency noise corner in Heterojunction Bipolar Transistor (HBT) TIA with shunt-feedback was derived. The electrical measurement was performed to validate the notions described in this work, appearing 9.6 pA/√Hz of input referred noise current Power Spectral Density (PSD), balance operation (VIN1=896mV, VIN2=896mV, VOUT1=1.978V, VOUT2=1.979V), bandwidth of 32GHz, overall transimpedance gain of 68.6dBΩ, a total 117mW power consumption and chip area of 484µm × 486µm.},
keywords={},
doi={10.1587/transfun.2020VLP0001},
ISSN={1745-1337},
month={December},}
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TY - JOUR
TI - A 32GHz 68dBΩ Low-Noise and Balance Operation Transimpedance Amplifier in 130nm SiGe BiCMOS for Optical Receivers
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 1408
EP - 1416
AU - Chao WANG
AU - Xianliang LUO
AU - Mohamed ATEF
AU - Pan TANG
PY - 2020
DO - 10.1587/transfun.2020VLP0001
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E103-A
IS - 12
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - December 2020
AB - In this paper, a balance operation Transimpedance Amplifier (TIA) with low-noise has been implemented for optical receivers in 130 nm SiGe BiCMOS Technology, in which the optimal tradeoff emitter current density and the location of high-frequency noise corner were analyzed for acquiring low-noise performance. The Auto-Zero Feedback Loop (AZFL) without introducing unnecessary noises at input of the TIA, the tail current sink with high symmetries and the balance operation TIA with the shared output of Operational Amplifier (OpAmp) in AZFL were designed to keep balanced operation for the TIA. Moreover, cascode and shunt-feedback were also employed to expanding bandwidth and decreasing input referred noise. Besides, the formula for calculating high-frequency noise corner in Heterojunction Bipolar Transistor (HBT) TIA with shunt-feedback was derived. The electrical measurement was performed to validate the notions described in this work, appearing 9.6 pA/√Hz of input referred noise current Power Spectral Density (PSD), balance operation (VIN1=896mV, VIN2=896mV, VOUT1=1.978V, VOUT2=1.979V), bandwidth of 32GHz, overall transimpedance gain of 68.6dBΩ, a total 117mW power consumption and chip area of 484µm × 486µm.
ER -