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[Author] Yasuhiro HORIIKE(2hit)

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  • Study on Elemental Technologies for Creation of Healthcare Chip Fabricated on Polyethylene Terephthalate Plate

    Akio OKI  Yuzuru TAKAMURA  Takayuki FUKASAWA  Hiroki OGAWA  Yoshitaka ITO  Takanori ICHIKI  Yasuhiro HORIIKE  

     
    PAPER

      Vol:
    E84-C No:12
      Page(s):
    1801-1806

    Elemental technologies have been studied to establish the healthcare chip which is an intelligent micro analytical system to detect human health markers from a trail of blood. A two steps process for deep quartz dry-etching was discussed in order to overcome the issues of concave-shaped defects at the bottom of grooves. A coating with 2-methacryloyloxyethylphosphorylcholine (MPC) polymer was studied to suppress the adsorption of bio-substance onto the inner wall of the flow channel on chip and good bio-compatibility was achieved for suppression of protein adsorption and blood cell adhesion. A prototype of healthcare chip was fabricated on polyethylene terephthalate (PET) plate using a micro molding technique. Using this chip, the ion concentrations of pH, Na+, K+, Ca++ were successfully measured with embedded ion sensitive field effect transistors (ISFET's).

  • Application of Photoexcited Reaction to VLSI Process

    Yasuhiro HORIIKE  

     
    INVITED PAPER-Opto-Electronics Technology for LSIs

      Vol:
    E76-C No:1
      Page(s):
    32-40

    Recent progress on photoexcited process applications to fabricating of VLSI and flat panel devices in Japan has been reviewed. The excimer laser melt technique makes it possible to form large-grain poly-Si film on a glass substrate, improving TFT electrical characteristics, and to fill metals into high-aspect-ratio contact holes in VLSI metallization. Scanning of CW laser in poly-Si film led to growth of a single-crystal Si layer on SiO2 to fabricate 3-D (dimensional) devices successfully. Direct writing with pyrolytic reaction was put into practice for interconnection restructuring. In the photochemical process, lower temperature epitaxial growth of Si and dry cleaning of a Si wafer employing Hg lamp irradiation were noted. Directional etching was performed by sidewall film formation, while resolution of better than 0.5 µm was difficult to obtain due to diffraction limit. It was proposed that higher resolution would be obtained by introduction of a nonlinear process which enhanced pattern contrast.