In order to improve the critical current density (Jc) of c-axis-oriented EuBa2Cu3O7 (c-EBCO) thin films deposited on R-plane sapphires (R-Al2O3) with a CeO2 buffer layer, insertion of an Sm2O3 buffer layer and optimization of its deposition condition were attempted. The effects of substrate temperature and film thickness of an Sm2O3 buffer layer on the orientation, crystallinity, surface morphology and superconducting properties of EBCO thin films were examined. As a result, EBCO thin films with Jc = 5.7 MA/cm2 at 77.3 K were obtained on a sapphire with a CeO2(80 )Sm2O3(200 ) buffer layer. Epitaxial relations of sputter-deposited films were clarified.