Superconducting Properties of EuBa2Cu3O7 Thin Films Deposited on R-Plane Sapphires with CeO2
Sm2O3 Buffer Layers Using Magnetron Sputtering
Summary :
In order to improve the critical current density (Jc) of c-axis-oriented EuBa2Cu3O7 (c-EBCO) thin films deposited on R-plane sapphires (R-Al2O3) with a CeO2 buffer layer, insertion of an Sm2O3 buffer layer and optimization of its deposition condition were attempted. The effects of substrate temperature and film thickness of an Sm2O3 buffer layer on the orientation, crystallinity, surface morphology and superconducting properties of EBCO thin films were examined. As a result, EBCO thin films with Jc = 5.7 MA/cm2 at 77.3 K were obtained on a sapphire with a CeO2(80
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E87-C No.2 pp.197-201
- Publication Date
- 2004/02/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Section on Recent Progress in Oxide Thin Films by Sputtering)
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Osamu MICHIKAMI, Yasuyuki OTA, Shinji KIKUCHI, "Superconducting Properties of EuBa2Cu3O7 Thin Films Deposited on R-Plane Sapphires with CeO2
Abstract: In order to improve the critical current density (Jc) of c-axis-oriented EuBa2Cu3O7 (c-EBCO) thin films deposited on R-plane sapphires (R-Al2O3) with a CeO2 buffer layer, insertion of an Sm2O3 buffer layer and optimization of its deposition condition were attempted. The effects of substrate temperature and film thickness of an Sm2O3 buffer layer on the orientation, crystallinity, surface morphology and superconducting properties of EBCO thin films were examined. As a result, EBCO thin films with Jc = 5.7 MA/cm2 at 77.3 K were obtained on a sapphire with a CeO2(80
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e87-c_2_197/_p
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@ARTICLE{e87-c_2_197,
author={Osamu MICHIKAMI, Yasuyuki OTA, Shinji KIKUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Superconducting Properties of EuBa2Cu3O7 Thin Films Deposited on R-Plane Sapphires with CeO2
year={2004},
volume={E87-C},
number={2},
pages={197-201},
abstract={In order to improve the critical current density (Jc) of c-axis-oriented EuBa2Cu3O7 (c-EBCO) thin films deposited on R-plane sapphires (R-Al2O3) with a CeO2 buffer layer, insertion of an Sm2O3 buffer layer and optimization of its deposition condition were attempted. The effects of substrate temperature and film thickness of an Sm2O3 buffer layer on the orientation, crystallinity, surface morphology and superconducting properties of EBCO thin films were examined. As a result, EBCO thin films with Jc = 5.7 MA/cm2 at 77.3 K were obtained on a sapphire with a CeO2(80
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Superconducting Properties of EuBa2Cu3O7 Thin Films Deposited on R-Plane Sapphires with CeO2
T2 - IEICE TRANSACTIONS on Electronics
SP - 197
EP - 201
AU - Osamu MICHIKAMI
AU - Yasuyuki OTA
AU - Shinji KIKUCHI
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2004
AB - In order to improve the critical current density (Jc) of c-axis-oriented EuBa2Cu3O7 (c-EBCO) thin films deposited on R-plane sapphires (R-Al2O3) with a CeO2 buffer layer, insertion of an Sm2O3 buffer layer and optimization of its deposition condition were attempted. The effects of substrate temperature and film thickness of an Sm2O3 buffer layer on the orientation, crystallinity, surface morphology and superconducting properties of EBCO thin films were examined. As a result, EBCO thin films with Jc = 5.7 MA/cm2 at 77.3 K were obtained on a sapphire with a CeO2(80
ER -
English
