The individual steps of UV imprint lithography have been explained in detail from the points of manufacturing nano-structures. The applications to photonic devices have been also introduced.

Recent years, millimeter wave applications for wireless communication have attracted much attention and expected. We focused on an NRD guide and sapphire which have the excellent low loss characteristics in millimeter wave region. In this paper, an NRD guide excited sapphire disk resonator and millimeter wave bandpass filter with narrow bandwidth using proposed resonators were designed and fabricated. As a result, it was realized that the 3-pole bandpass filter with center frequency 58.64 GHz and 3 dB bandwidth 273 MHz. Moreover, its insertion loss was found to be about 1.5 dB.

A dielectric resonator with a gap between the top plate and the rest has been useful for measuring the penetration depth (λ) of superconductor films, a parameter essential for obtaining the intrinsic microwave surface resistance (Rs) of thin superconductor films. We investigated effects of a gap on the microwave properties of TE0ml-mode sapphire resonators with a gap between the top plate and the rest of the resonator. Regardless of a 10 µm-gap in TE0ml-mode sapphire resonators, variations of the TE0ml-mode resonant frequency on temperature (Δf0) as well as TE0ml-mode unloaded Q remained almost the same due to lack of axial currents inside the resonator and negligible radiation effects. The λ of YBa2Cu3O7-δ (YBCO) films obtained from a fit to the temperature-dependent Δf0 appeared to be 195 nm at 0 K and 19.3 GHz, which was well compared with the corresponding value of 193 nm at 10 kHz measured by the mutual inductance method. The intrinsic Rs of YBCO films on the order of 1 mΩ, and the tan δ of sapphire on the order of 10-8 at 15 K and 40 GHz could be measured simultaneously using sapphire resonators with a 10 µm-gap.

A cryogenic Whispering Gallery sapphire resonator oscillator has been investigated using a 4 K pulse-tube cryocooler. The turnover temperature of the chosen mode in the sapphire crystal was 9.17 K with an unloaded Q-factor of 7108. The prototype sapphire-loaded cavity oscillator was designed to oscillate at 9.195 GHz. A fractional frequency stability of 210-13 was measured at integration times of 10 s.

Precise designs are presented for sapphire rod resonators of three types, which have been proposed by the IEC/TC90/WG8 in the standard measurement method of the surface resistance Rs of high-Tc superconductor (HTS) films; an open-type, a cavity-type and a closed-type. In order to separate TE011 and TE013 modes, which are used in Rs measurements, from the other modes, appropriate dimensions for these three resonators are determined from mode charts calculated from a rigorous analysis based on the mode matching method, taking account of an uniaxial-anisotropic characteristic of sapphire. Comparison of the open-type resonator with the closed-type is performed. For the open-type, the unloaded Q values of both the TE011 and TE013 modes are reduced by radiations of a leaky state TM310 mode. Finally, validity of the design and a two-sapphire-rod-resonator method will be verified by experiments.

In order to improve the critical current density (Jc) of c-axis-oriented EuBa2Cu3O7 (c-EBCO) thin films deposited on R-plane sapphires (R-Al2O3) with a CeO2 buffer layer, insertion of an Sm2O3 buffer layer and optimization of its deposition condition were attempted. The effects of substrate temperature and film thickness of an Sm2O3 buffer layer on the orientation, crystallinity, surface morphology and superconducting properties of EBCO thin films were examined. As a result, EBCO thin films with Jc = 5.7 MA/cm2 at 77.3 K were obtained on a sapphire with a CeO2(80 )Sm2O3(200 ) buffer layer. Epitaxial relations of sputter-deposited films were clarified.

Recessed 0.15 µm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated using inductively-coupled-plasma reactive ion etching (ICP-RIE) on sapphire substrate. These 0.15 µm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm and peak extrinsic transconductance of 346 mS/mm. The threshold voltage was -4.1 V. A unity gain cut-off frequency (fT) of 80 GHz and maximum frequency of oscillation (fmax) of 73 GHz were measured on these devices. Pulsed I-(V) measurements did not show any significant dispersion. At 20 GHz, a continuous-wave (CW) output power density of 3.1 W/mm with power-added-efficiency (PAE) of 29.9% was obtained.

A new type of photodetector called "photosensitive floating field emitter, (PFFE)" has been proposed. The PFFE device combines an n-type cone-shaped triode field emitter with a-Si p-i-n photodiode film. However, a PFFE cannot detect two-dimensional distributions of light intensity. In this paper, we propose a novel structure to overcome the above this problem of the PFFE. The device was fabricated on a silicon-on-sapphire substrate to permit irradiation from the backside. p-n photodiodes were constructed within a field emitters, the n+ region being separated by p+ regions to permit detection of two- dimensional light distributions. The emission current of the PFFE/SOS was found to be proportional to the illumination intensity, but the quantum efficiency was only about 2%. This quantum efficiency is lower than that expected. Under irradiation, the emission current increased, but the gate-leakage current increased. This gate-leakage current was several orders of magnitude larger than the emission current. Almost photo-generated electrons lost in the gate electrode.

We have developed a 2 GHz band superconducting 8-pole tunable quasi-elliptic function filter on sapphire substrate. The tunable filter has a sharp skirt characteristic by transmission zeros. And the tunable filter uses a low-cost substrate of sapphire. An adjustment of center frequency for the filter is realized by a tunable technique with a piezoelectric bending actuator. The tunable filter realized center frequency shift of 7.62 MHz with conditions of bandwidth change of 0.5% and ripple change of 0.25 dB. Center frequency of the 8-pole quasi-elliptic function filter agreed with the designed value. Given these features, a superconducting filter with a sharp skirt characteristic for next-generation mobile RF applications is expected to be realized by applying these filters.

A frequency-tuning method in the microwave region, which maintains a high unloaded Q-factor, was demonstrated using a double-sapphire-loaded cavity which operates on the Whispering Gallery mode, WGH9,1,0. Two adjacent nominally identical sapphire cylinders were positioned in a copper cavity and tuned by changing their relative coupling. A frequency tuning range of 85 MHz and a maximum unloaded Q-factor of 1.3 105 was experimentally measured at room temperature. This is only 13% less than the single resonator Q-factor, which is a small compromise to pay for the increased tuning capacity.

A stabilized local oscillator is one of the key components for any radar system, especially for a Doppler radar in detecting slowly moving targets. Based on hybrid semiconductor/superconductor circuitry, the HTS local oscillator produces stable, low noise performance superior to that achieved with conventional technology. The device combines a high Q HTS sapphire cavity resonator (f=5.6 GHz) with a C-band low noise GsAs HEMT amplifier. The phase noise of the oscillator, measured by a HP 3048A noise measurement system, is -134 dBc/Hz at 10 kHz offset at 77 K.

We developed a compact rf receiver subsystem using a high-Tc superconducting sharp skirt band-pass filter with a center frequency tuning function. A 24-pole hairpin-type 2 GHz microstrip-line filter was fabricated with YBa2Cu3Oy thin films deposited on a LaAlO3 substrate. Attenuation characteristics were more than 30 dB at 1 MHz apart from both the lower and the higher pass-band edges. For center frequency tuning, a 1-mm-thick dielectric sapphire plate was stacked on the filter, and the filtering characteristics were tuned by moving the plate using a piezoelectric bending actuator. The range of the center frequency modulation was more than 12 MHz with no degradation of the low-loss and sharp-skirt characteristics.

UV/blue/green InGaN and GaN single-quantum-well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The external quantum efficiency (EQE) of the UV InGaN LED on ELOG was much higher than that on sapphire only at high-current operation. At low-current operation, both LEDs had the same EQE. When the active layer was GaN, EQE of the LED on sapphire was much lower than that on ELOG even at low- and high-current operations due to the lack of localized energy states formed by alloy composition fluctuations. In order to improve the lifetime of laser diode (LD), ELOG had to be used because the operating current density of the LD is much higher than that of LED. A violet InGaN multi-quantum-well/GaN/AlGaN separate-confinement-heterostructure LD was grown on ELOG on sapphire. The LDs with cleaved mirror facets showed an output power as high as 40 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode was observed at an output power of up to 40 mW. The estimated lifetime of the LDs at a constant output power of 10 mW was more than 2,000 hours under CW operation at an ambient temperature of 60.

This paper summarizes our recent efforts in modelocking Ti:sapphire lasers with semiconductor saturable absorber mirrors (SESAMs). We present the shortest optical pulses ever generated directly from a laser. The modelocking build-up time (T BU) of 60 µs is, to our knowledge, the shortest reported for a passively modelocked KLM laser to date.

FM laser operation of a Ti:sapphire laser is studied experimentally for the first time with an internal phase modulator. We obtained extremely wide FM sidebands of 8 THz width whose phase modulation index was 25,000 rad at a modulation frequency of 160 MHz.

Self-modelocking of Ti:sapphire laser has obtained with less than 2 W of argon-ion laser pumping. Two independent lasers with 36 fsec and 63 fsec in pulse duration were operated by a 6 W pump laser. In the low-threshold lasers, not only an ordinary mode-locking but also a double-pulse mode-locking, where two pulses circulating in the cavity, was stable.

This paper describes a nondestructive measurement method for complex permittivity of dielectric material at pseudo microwave frequencies. The resonator used in this study has a cylindrical cavity filled with a sapphire material of a well known complex permittivity. The resonator is divided into two parts at the center. A dielectric substrate specimen is clamped with these halves. Relative permittivity εand loss tangent tan δ of the specimen are obtained at 3 GHz using the TE011 resonance mode. The accuracy of the present method is evaluated through the comparison of the measured values by the new method with those at around 10 GHz by the conventional empty cavity resonator method. The errors of measurements are smaller than 1% and 1105 for εand tan δ, respectively.

We report the dispersion of two-photon absorption (TPA) coefficient, (β), in polydiacetylene (12, 8) thin film waveguides in the wavelength range less than the one-photon band-gap with a 100 femtosecond mode-locked Ti: Sapphire laser pulses. The TPA coefficient was found to be 4 cm/GW for TE polarization at 900 nm (1.38 eV) by taking into account a Gaussian intensity distribution as well as a temporal pulse shape. We observed a sharp resonance in β above the first one-photon allowed transition with a full width at half maximum (FWHM) of 90 meV.

Optical Kerr effect were applied to all-optical switching devices in the form of nonlinear waveguide directional couplers. The nonlinear waveguide directional coupler consists of a quartz thin gap between two Corning 7059 guided layers on a pyrex substrate with ion-milled grating and organic thin film as a top layer. The vacuum-deposited polydiacetylene (12, 8) film was used as an organic nonlinear material. Power-dependent switching phenomenon in this asymmetrical nonlinear directional coupler was observed by 100 fs pulse duration of mode-locked Ti: Sapphire laser.