High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire

Ilesanmi ADESIDA; Vipan KUMAR; Jinwei YANG; Muhammed Asif KHAN

High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire

Ilesanmi ADESIDA, Vipan KUMAR, Jinwei YANG, Muhammed Asif KHAN

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Recessed 0.15 µm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated using inductively-coupled-plasma reactive ion etching (ICP-RIE) on sapphire substrate. These 0.15 µm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm and peak extrinsic transconductance of 346 mS/mm. The threshold voltage was -4.1 V. A unity gain cut-off frequency (f_T) of 80 GHz and maximum frequency of oscillation (f_max) of 73 GHz were measured on these devices. Pulsed I-(V) measurements did not show any significant dispersion. At 20 GHz, a continuous-wave (CW) output power density of 3.1 W/mm with power-added-efficiency (PAE) of 29.9% was obtained.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.1955-1959

Publication Date: 2003/10/01

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)

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Ilesanmi ADESIDA, Vipan KUMAR, Jinwei YANG, Muhammed Asif KHAN, "High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 10, pp. 1955-1959, October 2003, doi: .
Abstract: Recessed 0.15 µm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated using inductively-coupled-plasma reactive ion etching (ICP-RIE) on sapphire substrate. These 0.15 µm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm and peak extrinsic transconductance of 346 mS/mm. The threshold voltage was -4.1 V. A unity gain cut-off frequency (f_T) of 80 GHz and maximum frequency of oscillation (f_max) of 73 GHz were measured on these devices. Pulsed I-(V) measurements did not show any significant dispersion. At 20 GHz, a continuous-wave (CW) output power density of 3.1 W/mm with power-added-efficiency (PAE) of 29.9% was obtained.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_10_1955/_p

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@ARTICLE{e86-c_10_1955,
author={Ilesanmi ADESIDA, Vipan KUMAR, Jinwei YANG, Muhammed Asif KHAN, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire},
year={2003},
volume={E86-C},
number={10},
pages={1955-1959},
abstract={Recessed 0.15 µm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated using inductively-coupled-plasma reactive ion etching (ICP-RIE) on sapphire substrate. These 0.15 µm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm and peak extrinsic transconductance of 346 mS/mm. The threshold voltage was -4.1 V. A unity gain cut-off frequency (f_T) of 80 GHz and maximum frequency of oscillation (f_max) of 73 GHz were measured on these devices. Pulsed I-(V) measurements did not show any significant dispersion. At 20 GHz, a continuous-wave (CW) output power density of 3.1 W/mm with power-added-efficiency (PAE) of 29.9% was obtained.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire
T2 - IEICE TRANSACTIONS on Electronics
SP - 1955
EP - 1959
AU - Ilesanmi ADESIDA
AU - Vipan KUMAR
AU - Jinwei YANG
AU - Muhammed Asif KHAN
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - Recessed 0.15 µm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated using inductively-coupled-plasma reactive ion etching (ICP-RIE) on sapphire substrate. These 0.15 µm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm and peak extrinsic transconductance of 346 mS/mm. The threshold voltage was -4.1 V. A unity gain cut-off frequency (f_T) of 80 GHz and maximum frequency of oscillation (f_max) of 73 GHz were measured on these devices. Pulsed I-(V) measurements did not show any significant dispersion. At 20 GHz, a continuous-wave (CW) output power density of 3.1 W/mm with power-added-efficiency (PAE) of 29.9% was obtained.
ER -