A dielectric resonator with a gap between the top plate and the rest has been useful for measuring the penetration depth (λ) of superconductor films, a parameter essential for obtaining the intrinsic microwave surface resistance (Rs) of thin superconductor films. We investigated effects of a gap on the microwave properties of TE0ml-mode sapphire resonators with a gap between the top plate and the rest of the resonator. Regardless of a 10 µm-gap in TE0ml-mode sapphire resonators, variations of the TE0ml-mode resonant frequency on temperature (Δf0) as well as TE0ml-mode unloaded Q remained almost the same due to lack of axial currents inside the resonator and negligible radiation effects. The λ of YBa2Cu3O7-δ (YBCO) films obtained from a fit to the temperature-dependent Δf0 appeared to be 195 nm at 0 K and 19.3 GHz, which was well compared with the corresponding value of 193 nm at 10 kHz measured by the mutual inductance method. The intrinsic Rs of YBCO films on the order of 1 mΩ, and the tan δ of sapphire on the order of 10-8 at 15 K and 40 GHz could be measured simultaneously using sapphire resonators with a 10 µm-gap.
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Sang Young LEE, Jae Hun LEE, Woo Il YANG, John H. CLAASSEN, "Microwave Properties of Sapphire Resonators with a Gap and Their Applicability for Measurements of the Intrinsic Surface Impedance of Thin Superconductor Films" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 2, pp. 132-139, February 2006, doi: 10.1093/ietele/e89-c.2.132.
Abstract: A dielectric resonator with a gap between the top plate and the rest has been useful for measuring the penetration depth (λ) of superconductor films, a parameter essential for obtaining the intrinsic microwave surface resistance (Rs) of thin superconductor films. We investigated effects of a gap on the microwave properties of TE0ml-mode sapphire resonators with a gap between the top plate and the rest of the resonator. Regardless of a 10 µm-gap in TE0ml-mode sapphire resonators, variations of the TE0ml-mode resonant frequency on temperature (Δf0) as well as TE0ml-mode unloaded Q remained almost the same due to lack of axial currents inside the resonator and negligible radiation effects. The λ of YBa2Cu3O7-δ (YBCO) films obtained from a fit to the temperature-dependent Δf0 appeared to be 195 nm at 0 K and 19.3 GHz, which was well compared with the corresponding value of 193 nm at 10 kHz measured by the mutual inductance method. The intrinsic Rs of YBCO films on the order of 1 mΩ, and the tan δ of sapphire on the order of 10-8 at 15 K and 40 GHz could be measured simultaneously using sapphire resonators with a 10 µm-gap.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.2.132/_p
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@ARTICLE{e89-c_2_132,
author={Sang Young LEE, Jae Hun LEE, Woo Il YANG, John H. CLAASSEN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Microwave Properties of Sapphire Resonators with a Gap and Their Applicability for Measurements of the Intrinsic Surface Impedance of Thin Superconductor Films},
year={2006},
volume={E89-C},
number={2},
pages={132-139},
abstract={A dielectric resonator with a gap between the top plate and the rest has been useful for measuring the penetration depth (λ) of superconductor films, a parameter essential for obtaining the intrinsic microwave surface resistance (Rs) of thin superconductor films. We investigated effects of a gap on the microwave properties of TE0ml-mode sapphire resonators with a gap between the top plate and the rest of the resonator. Regardless of a 10 µm-gap in TE0ml-mode sapphire resonators, variations of the TE0ml-mode resonant frequency on temperature (Δf0) as well as TE0ml-mode unloaded Q remained almost the same due to lack of axial currents inside the resonator and negligible radiation effects. The λ of YBa2Cu3O7-δ (YBCO) films obtained from a fit to the temperature-dependent Δf0 appeared to be 195 nm at 0 K and 19.3 GHz, which was well compared with the corresponding value of 193 nm at 10 kHz measured by the mutual inductance method. The intrinsic Rs of YBCO films on the order of 1 mΩ, and the tan δ of sapphire on the order of 10-8 at 15 K and 40 GHz could be measured simultaneously using sapphire resonators with a 10 µm-gap.},
keywords={},
doi={10.1093/ietele/e89-c.2.132},
ISSN={1745-1353},
month={February},}
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TY - JOUR
TI - Microwave Properties of Sapphire Resonators with a Gap and Their Applicability for Measurements of the Intrinsic Surface Impedance of Thin Superconductor Films
T2 - IEICE TRANSACTIONS on Electronics
SP - 132
EP - 139
AU - Sang Young LEE
AU - Jae Hun LEE
AU - Woo Il YANG
AU - John H. CLAASSEN
PY - 2006
DO - 10.1093/ietele/e89-c.2.132
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2006
AB - A dielectric resonator with a gap between the top plate and the rest has been useful for measuring the penetration depth (λ) of superconductor films, a parameter essential for obtaining the intrinsic microwave surface resistance (Rs) of thin superconductor films. We investigated effects of a gap on the microwave properties of TE0ml-mode sapphire resonators with a gap between the top plate and the rest of the resonator. Regardless of a 10 µm-gap in TE0ml-mode sapphire resonators, variations of the TE0ml-mode resonant frequency on temperature (Δf0) as well as TE0ml-mode unloaded Q remained almost the same due to lack of axial currents inside the resonator and negligible radiation effects. The λ of YBa2Cu3O7-δ (YBCO) films obtained from a fit to the temperature-dependent Δf0 appeared to be 195 nm at 0 K and 19.3 GHz, which was well compared with the corresponding value of 193 nm at 10 kHz measured by the mutual inductance method. The intrinsic Rs of YBCO films on the order of 1 mΩ, and the tan δ of sapphire on the order of 10-8 at 15 K and 40 GHz could be measured simultaneously using sapphire resonators with a 10 µm-gap.
ER -