UV/Blue/Green InGaN-Based LEDs and Laser Diodes Grown on Epitaxially Laterally Overgrown GaN

Shuji NAKAMURA

UV/Blue/Green InGaN-Based LEDs and Laser Diodes Grown on Epitaxially Laterally Overgrown GaN

Shuji NAKAMURA

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UV/blue/green InGaN and GaN single-quantum-well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The external quantum efficiency (EQE) of the UV InGaN LED on ELOG was much higher than that on sapphire only at high-current operation. At low-current operation, both LEDs had the same EQE. When the active layer was GaN, EQE of the LED on sapphire was much lower than that on ELOG even at low- and high-current operations due to the lack of localized energy states formed by alloy composition fluctuations. In order to improve the lifetime of laser diode (LD), ELOG had to be used because the operating current density of the LD is much higher than that of LED. A violet InGaN multi-quantum-well/GaN/AlGaN separate-confinement-heterostructure LD was grown on ELOG on sapphire. The LDs with cleaved mirror facets showed an output power as high as 40 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode was observed at an output power of up to 40 mW. The estimated lifetime of the LDs at a constant output power of 10 mW was more than 2,000 hours under CW operation at an ambient temperature of 60.

Publication: IEICE TRANSACTIONS on Electronics Vol.E83-C No.4 pp.529-535

Publication Date: 2000/04/25

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)

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Shuji NAKAMURA, "UV/Blue/Green InGaN-Based LEDs and Laser Diodes Grown on Epitaxially Laterally Overgrown GaN" in IEICE TRANSACTIONS on Electronics, vol. E83-C, no. 4, pp. 529-535, April 2000, doi: .
Abstract: UV/blue/green InGaN and GaN single-quantum-well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The external quantum efficiency (EQE) of the UV InGaN LED on ELOG was much higher than that on sapphire only at high-current operation. At low-current operation, both LEDs had the same EQE. When the active layer was GaN, EQE of the LED on sapphire was much lower than that on ELOG even at low- and high-current operations due to the lack of localized energy states formed by alloy composition fluctuations. In order to improve the lifetime of laser diode (LD), ELOG had to be used because the operating current density of the LD is much higher than that of LED. A violet InGaN multi-quantum-well/GaN/AlGaN separate-confinement-heterostructure LD was grown on ELOG on sapphire. The LDs with cleaved mirror facets showed an output power as high as 40 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode was observed at an output power of up to 40 mW. The estimated lifetime of the LDs at a constant output power of 10 mW was more than 2,000 hours under CW operation at an ambient temperature of 60.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_529/_p

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@ARTICLE{e83-c_4_529,
author={Shuji NAKAMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={UV/Blue/Green InGaN-Based LEDs and Laser Diodes Grown on Epitaxially Laterally Overgrown GaN},
year={2000},
volume={E83-C},
number={4},
pages={529-535},
abstract={UV/blue/green InGaN and GaN single-quantum-well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The external quantum efficiency (EQE) of the UV InGaN LED on ELOG was much higher than that on sapphire only at high-current operation. At low-current operation, both LEDs had the same EQE. When the active layer was GaN, EQE of the LED on sapphire was much lower than that on ELOG even at low- and high-current operations due to the lack of localized energy states formed by alloy composition fluctuations. In order to improve the lifetime of laser diode (LD), ELOG had to be used because the operating current density of the LD is much higher than that of LED. A violet InGaN multi-quantum-well/GaN/AlGaN separate-confinement-heterostructure LD was grown on ELOG on sapphire. The LDs with cleaved mirror facets showed an output power as high as 40 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode was observed at an output power of up to 40 mW. The estimated lifetime of the LDs at a constant output power of 10 mW was more than 2,000 hours under CW operation at an ambient temperature of 60.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - UV/Blue/Green InGaN-Based LEDs and Laser Diodes Grown on Epitaxially Laterally Overgrown GaN
T2 - IEICE TRANSACTIONS on Electronics
SP - 529
EP - 535
AU - Shuji NAKAMURA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - UV/blue/green InGaN and GaN single-quantum-well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The external quantum efficiency (EQE) of the UV InGaN LED on ELOG was much higher than that on sapphire only at high-current operation. At low-current operation, both LEDs had the same EQE. When the active layer was GaN, EQE of the LED on sapphire was much lower than that on ELOG even at low- and high-current operations due to the lack of localized energy states formed by alloy composition fluctuations. In order to improve the lifetime of laser diode (LD), ELOG had to be used because the operating current density of the LD is much higher than that of LED. A violet InGaN multi-quantum-well/GaN/AlGaN separate-confinement-heterostructure LD was grown on ELOG on sapphire. The LDs with cleaved mirror facets showed an output power as high as 40 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode was observed at an output power of up to 40 mW. The estimated lifetime of the LDs at a constant output power of 10 mW was more than 2,000 hours under CW operation at an ambient temperature of 60.
ER -