The Cyber-Physical Integrated Society (CPIS) is being formed with the fusion of cyber-space and the real-world. In this paper, we will discuss Data-Driven Decision-Making (DDDM) support systems to solve social problems in the CPIS. First, we introduce a Web of Resources (WoR) that uses Web booking log data for destination data management. Next, we introduce an Internet of Persons (IoP) system to visualize individual and group flows of people by analyzing collected Wi-Fi usage log data. Specifically, we present examples of how WoR and IoP visualize flows of groups of people that can be shared across different industries, including telecommunications carriers and railway operators, and policy decision support for local, short-term events. Finally, the importance of data-driven training of human resources to support DDDM in the future CPIS is discussed.

Information affects almost all aspects of life, and thus the Quality of Information (IQ) plays a critical role in businesses and societies; It can have significant positive and negative impacts on the quality of life of citizens, employees and organizations. Over many years aspects and challenges of IQ have been studied within various contexts. As a result, the general approach to the study of IQ has offered numerous management and measurement approaches, IQ frameworks and list of IQ criteria. As the volume of data and information increases, IQ problems become pervasive. Whereas earlier studies investigated specific aspects of IQ, the next phase of IQ research will need to examine IQ in a wider context, thus its impact on the quality of life and societies. In this paper we apply an IQ oriented framework to two cases, cloud computing and lifelogging, illustrating the impact of IQ on the quality of life. The paper demonstrates the value of the framework, the impact IQ can have on the quality of life and in summary provides a foundation for further research.

UV/blue/green InGaN and GaN single-quantum-well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The external quantum efficiency (EQE) of the UV InGaN LED on ELOG was much higher than that on sapphire only at high-current operation. At low-current operation, both LEDs had the same EQE. When the active layer was GaN, EQE of the LED on sapphire was much lower than that on ELOG even at low- and high-current operations due to the lack of localized energy states formed by alloy composition fluctuations. In order to improve the lifetime of laser diode (LD), ELOG had to be used because the operating current density of the LD is much higher than that of LED. A violet InGaN multi-quantum-well/GaN/AlGaN separate-confinement-heterostructure LD was grown on ELOG on sapphire. The LDs with cleaved mirror facets showed an output power as high as 40 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode was observed at an output power of up to 40 mW. The estimated lifetime of the LDs at a constant output power of 10 mW was more than 2,000 hours under CW operation at an ambient temperature of 60.