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[Author] Yoshifumi MURAMOTO(2hit)

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  • 10-Gbit/s InP-Based High-Performance Monolithic Photoreceivers Consisting of p-i-n Photodiodes and HEMT's

    Kiyoto TAKAHATA  Yoshifumi MURAMOTO  Kazutoshi KATO  Yuji AKATSU  Atsuo KOZEN  Yuji AKAHORI  

     
    PAPER-High-Speed Optical Devices

      Vol:
    E83-C No:6
      Page(s):
    950-958

    10-Gbit/s monolithic receiver OEIC's for 1.55-µm optical transmission systems were fabricated using a stacked layer structure of p-i-n photodiodes and HEMT's grown on InP substrates by single-step MOVPE. A receiver OEIC with a large O/E conversion factor was obtained by adding a three-stage differential amplifier to a conventional feedback amplifier monolithically integrated with a surface-illuminated p-i-n photodiode. The circuit configuration gave a preamplifier a transimpedance of 60 dBΩ. The receiver OEIC achieved error-free operation at 10 Gbit/s without a postamplifier even with the optical input as low as -10.3 dBm because of its large O/E conversion factor of 890 V/W. A two-channel receiver OEIC array for use in a 10-Gbit/s parallel photoreceiver module based on a PLC platform was made by monolithically integrating multimode WGPD's with HEMT preamplifiers. The side-illuminated structure of the WGPD is suitable for integration with other waveguide-type optical devices. The receiver OEIC arrays were fabricated on a 2-inch wafer with achieving excellent uniformity and a yield over 90%: average transimpedance and average 3-dB-down bandwidth were 43.8 dBΩ and 8.0 GHz. The two channels in the receiver OEIC array also showed sensitivities of -16.1 dBm and -15.3 dBm at 10 Gbit/s. The two-channel photoreceiver module was constructed by assembling the OEIC array on a PLC platform. The frequency response of the module was almost the same as that of the OEIC chip and the crosstalk between channels in the module was better than -27 dB in the frequency range below 6 GHz. These results demonstrate the feasibility of using our receiver OEIC's in various types of optical receiver systems.

  • 60-GHz Monolithic Photonic Millimeter-Wave Emitter for Fiber-Radio Applications

    Kiyoto TAKAHATA  Yoshifumi MURAMOTO  Seiji FUKUSHIMA  Tomofumi FURUTA  Tetsuichiro OHNO  Tadao ISHIBASHI  Hiroshi ITO  

     
    LETTER-Integrated Electronics

      Vol:
    E85-C No:6
      Page(s):
    1378-1380

    A uni-traveling-carrier refracting-facet photodiode, a short-stab bias circuit, and a patch antenna are monolithically integrated to make a compact and low-cost photonic millimeter-wave emitter for fiber-radio applications. The device emits the maximum effective radiation power of 173 dBm at 60 GHz including a directive gain of the patch antenna.