This paper reports dual-polarization In-phase and Quadrature (DP-IQ) modulators and photodetectors integrated with the 90° hybrid using InP-based monolithic integration technologies for 100/200Gb/s coherent transmission. The DP-IQ modulator was monolithically integrated with the Mach-Zehnder modulator array consisting of deep-ridge waveguides formed through dry etching and benzocyclobutene planarization processes. This DP-IQ modulator exhibited the low half-wavelength voltage (Vπ=1.5V) and the wide 3-dB bandwidth (f3dB > 28GHz). The photodetector monolithically integrated with the 90° hybrid consisting of multimode interference structures was realized by the butt-joint regrowth. A responsivity including total loss of 7.9dB in the waveguide was as high as 0.155A/W at a wavelength of 1550nm, and responsivity imbalance of the In-phase and Quadrature channels was less than ±0.5dB over the C-band. In addition, the low dark current (less than 500pA up to 85°C @ -3.0V) and the stable operation in the accelerated aging test (test condition: -5V at 175°C) over 5,000h were successfully achieved for the p-i-n-photodiode array with a buried heterostructure formed through the selective embedding regrowth. Finally, a receiver responsivity including intrinsic loss of 3dB in the polarization beam splitter was higher than 0.070A/W at a wavelength of 1550nm through the integration of the spot-size converter, and demodulation of 128Gb/s DP-QPSK and 224Gb/s DP-16QAM modulated signals was demonstrated for the compact coherent receiver using this photodetector integrated with the 90° hybrid. Therefore, we indicated that these InP-based monolithically integrated photonic devices are very useful for 100/200Gb/s pluggable coherent transceivers.

We present InP-based photodetectors monolithically integrated with a 90° hybrid toward over 400Gb/s coherent transmission systems. To attain a wide 3-dB bandwidth of more than 40GHz for 400Gb/s dual-polarization (DP)-16-ary quadrature amplitude modulation (16QAM) and 600Gb/s DP-64QAM through 64GBaud operation, A p-i-n photodiode structure consisting of a GaInAs thin absorption and low doping n-typed InP buffer layers was introduced to overcome the trade-off between short carrier transit time and low parasitic capacitance. Additionally, this InP buffer layer contributes to the reduction of propagation loss in the 90° hybrid waveguide, that is, this approach allows a high responsivity as well as wide 3-dB bandwidth operation. The coherent receiver module for the C-band (1530nm - 1570nm) operation indicated the wide 3-dB bandwidth of more than 40GHz and the high receiver responsivity of more than 0.070A/W (Chip responsivity within the C-band: 0.130A/W) thanks to photodetectors with this photodiode design. To expand the usable wavelengths in wavelength-division multiplexing toward large-capacity optical transmission, the photodetector integrated with the 90° hybrid optimized for the L-band (1565nm - 1612nm) operation was also fabricated, and exhibited the high responsivity of more than 0.120A/W over the L-band. Finally, the InP-based monolithically integrated photonic device consisting of eight-channel p-i-n photodiodes, two 90° hybrids and a beam splitter was realized for the miniaturization of modules and afforded the reduction of the total footprint by 70% in a module compared to photodetectors with the 90° hybrid and four-channel p-i-n photodiodes.